Generation lifetime, interface state density, active defect density and oxide resistivity measurements for SOI-MOSFETs and their radiation dependence

Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs

“…The results after HCD showed faster generation and recombination processes in the film ( Figure 5), with a correlation between the HCD of the front channel and the reduction of this FBE. This suggests an increased contribution of surface states on the generation and recombination processes [17]. …”

Impact of Radiation-Induced Back-Channel Leakage and Back-Gate Bias on Drain Current Transients of Thin-Gate-Oxide Partially Depleted Silicon-On-Insulator n-channel Metal–Oxide–Semiconductor Field-Effect Transistors

“…In spite of the different techniques published in the literature to extract the generation and recombination lifetimes from ID transients, there are only few studies discussing their applicability to the investigation of radiation effects. 11,47) Moreover, these only concentrate on the study of the generation lifetime and, to our best knowledge, no results including the recombination lifetime degradation have been reported. Under their experimental conditions, these works pointed to a reduction in bulk generation lifetime, together with an increase in surface generation velocity after irradiation.…”

“…Different techniques have been proposed for PD or fully depleted (FD) SOI MOSFETs to extract the generation or recombination lifetimes from "switch-off" or "switch-on" ID transients, respectively. [8][9][10][11][12][13][14] Recently, with the marked decrease in front-gate-oxide thickness (tfox), a new type of FBE associated with gate-body direct tunnelling has been identified in linear operation [low drain voltage (VD)] of SOI n-and p-channel MOSFETs. This new type of FBE has a similar influence on device and circuit operation as the classical impact-ionization-related "kink" effect.…”

Impact of hot-carrier stress on gate-induced floating body effects and drain current transients of thin gate oxide partially depleted SOI nMOSFETs

“…As can be observed from V FGon = 0.7 V and 1.5 V results in Fig. 4, both, the switch-off transients below and above the V FG threshold for body to gate EVB tunneling, become much faster after HCD, which can be attributed to a HC-induced degradation of the effective film generation and recombination lifetimes by means of an increase of the surface contribution [35,36]. At the same time, the steady-state I D levels (I D (t=∞)) have been found to consistently evolve according to the registered V Tf degradation.…”

“…In the past, similar transient techniques were applied to characterize different SOI material technologies [30][31][32], as well as to study the impact of radiation on the bulk and surface generation lifetime components [34][35][36]. Of course, the impact of HCD on I D transients has not been a primary interest, probably due to the inherent use of short L devices with increased small geometry leakage components, making them not suitable for accurate film lifetime extraction.…”