Generation and accumulation of dislocations on the silicon surface under the action of pulse-periodic emission from a YAG: Nd laser

Банишев, А. А.; Голубев, В. С.; Kremnev, Alexei Yu.

doi:10.1134/1.1395116

Cited by 6 publications

(14 citation statements)

References 2 publications

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“…2a. The above presented specifics of LII buildup following the increase of laser irradiation dose are similar to the results of [20], where scattered laser light intensity from the doped silicon surface was found to become higher after irradiation by a sequence of laser pulses. The laser used in [20] was a Nd 3+ :YAG laser with 300 ns pulse duration and 2-3 MW/cm 2 power density.…”

Section: Resultssupporting

confidence: 86%

“…It is known, periodic action of short laser pulses (τ~ 10 7 s) on the silicon surface results in origination, growth, and self-ordering of lattice defects, and finally the silicon surface destruction is observed [20]. During laser irradiation, energy of formation of point defects in silicon goes down by a few times, hence the number density of defects significantly increases ( ).…”

Section: Resultsmentioning

confidence: 99%

“…The drain of point defects towards dislocations is most effective in silicon at high temperatures, which is typical for laser irradiation process. The dislocations sizes at high irradiation doses depend on the irradiation mode and fluctuate from 10 to 70 μm [20].…”

Section: Resultsmentioning

confidence: 99%

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Laser-induced incandescence of silicon surface under 1064-nm excitation

Kopyshinsky¹,

Str.²

2012

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Laser-induced incandescence (LII) of silicon surface is investigated under the excitation by a Q-switched YAG:Nd laser. With the increase of laser irradiation dose, the increase of LII signal is observed, which is attended by visible changes of the surface geometry. The anomalous behavior of the parameter of non-linearity of LII is observed with the increase of laser excitation power.Keywords: laser-induced incandescence, silicon, laser surface processing.Manuscript received 27.08.12; revised version received 25.09.12; accepted for publication 17.10.12; published online 12.12.12.

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Section: Resultssupporting

confidence: 86%

Section: Resultsmentioning

confidence: 99%

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Laser-induced incandescence of silicon surface under 1064-nm excitation

Kopyshinsky¹,

Str.²

2012

Semicond. Phys. Quantum Electron. Optoelectron.

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“…Если продолжать облучение, то число линий скольжений рас-тет, в местах пересечений линий скольжения появляются микротрещины, и далее происходит разрушение кристалла. Таким образом, подтверждаются эффект накопления структурных дефектов в кремнии при увеличении числа импульсов лазерного облучения [5,6] и дислокационный механизм разрушения крем-ния при высокочастотном импульсном лазерном облучении [7]. О накопительном характере процесса дефектообразования и разрушения монокристалла кремния с увеличением дозы облучения свидетельст-вует и работа [8].…”

Section: Introductionunclassified

“…На рис. 5 приведено 3D-АСМ-изображение рельефа двух соседних облученных областей, полученных при облучении пластины, ориентированной в плоскости (100) с толщиной окисла d o = 500 нм, и плотности мощности 2,0·10 6 Вт/см 2 , с разрушением пленки SiO 2 в центрах облученных областей.…”

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