Electronic stability
in aluminum clusters is typically associated
with either closed electronic shells of delocalized electrons or a
+3 oxidation state of aluminum. To investigate whether there are alternative
routes toward electronic stability in aluminum oxide clusters, we
used theoretical methods to examine the geometric and electronic structure
of Al
n
O
m
(2
≤ n ≤ 7; 1 ≤ m ≤ 10) clusters. Electronically stable clusters with large
HOMO–LUMO (highest occupied molecular orbital and lowest unoccupied
molecular orbital) gaps were identified and could be grouped into
two categories. (1) Al2n
O3n
clusters with a +3 oxidation state on the aluminum
and (2) planar clusters including Al4O4, Al5O3, Al6O5, and Al6O6. The structures of the planar clusters have external
Al atoms bound to a single O atom. Their electronic stability is explained
by the multiple-valence Al sites, with the internal Al atoms having
an oxidation state of +3, whereas the external Al atoms have an oxidation
state of +1.