2000
DOI: 10.1088/0965-0393/8/2/302
|View full text |Cite
|
Sign up to set email alerts
|

Generalized stacking fault energies for embedded atom FCC metals

Abstract: Atomistic calculations for the 112 -generalized stacking fault (GSF) energy curve are performed for various embedded atom models of FCC metals. Models include those by Voter and Chen; Angelo, Moody and Baskes; Oh and Johnson; Mishin and Farkas; and Ercolessi and Adams. The resulting curves show similar characteristics but vary in their agreement with the experimental estimates of the intrinsic stacking fault energy, sf , and with density functional theory (DFT) calculations of the GSF curve. These curves are… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2

Citation Types

14
142
0

Year Published

2004
2004
2016
2016

Publication Types

Select...
6
4

Relationship

0
10

Authors

Journals

citations
Cited by 290 publications
(156 citation statements)
references
References 37 publications
(57 reference statements)
14
142
0
Order By: Relevance
“…Indeed, it is known that EAM Al potentials do not accurately model the unstable stacking fault energy, while DFT is offered as a better approach. 22 While the shear response of the OFDFT compares well to that obtained with a Kohn-Sham DFT formulation with similar parameters and the same local pseudopotential, Fig. 1, the results differ significantly from those obtained with the EAM.…”
supporting
confidence: 51%
“…Indeed, it is known that EAM Al potentials do not accurately model the unstable stacking fault energy, while DFT is offered as a better approach. 22 While the shear response of the OFDFT compares well to that obtained with a Kohn-Sham DFT formulation with similar parameters and the same local pseudopotential, Fig. 1, the results differ significantly from those obtained with the EAM.…”
supporting
confidence: 51%
“…Despite the considerable volume of interest that this problem has generated, as yet there does not seem to be a common view as to the underlying mechanism behind the defect generation. Several models around the year 1930 were proposed in perfect crystals to estimate the maximum stress before inducing plasticity [1,2]. At the atomic level, the plasticity is described by the rearrangement of atoms from its current configuration.…”
Section: Introductionmentioning
confidence: 99%
“…An important indicator of this is that the generalized stacking fault energy-one of the most important properties for dislocation nucleation-is the same for the LJ potential and more advanced potentials for nickel and copper. 13 We compare the results of planar-extension boundary conditions and boundary conditions based on the K I -continuum solution.…”
Section: Introductionmentioning
confidence: 99%