Generalised Early factor for compact modelling of bipolar transistors with non-uniform base

Mijalković, Slobodan

doi:10.1049/el:20031123

Cited by 8 publications

(4 citation statements)

References 4 publications

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“…The x E (x C ) is the increase of the quasi-neutral base width due to a change in the emitter-base (collector-base) depletion layer width. [8,9] V…”

Section: Early Voltage Model For Soi Sige Hbtsmentioning

confidence: 99%

Early effect modeling of silicon-on-insulator SiGe heterojunction bipolar transistors

Xu¹,

Zhang²,

Hu³

et al. 2011

Chinese Phys. B

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Silicon germanium (SiGe) heterojunction bipolar transistor (HBT) on thin silicon-on-insulator (SOI) has recently been demonstrated and integrated into the latest SOI BiCMOS technology. The Early effect of the SOI SiGe HBT is analysed considering vertical and horizontal collector depletion, which is different from that of a bulk counterpart. A new compact formula of the Early voltage is presented and validated by an ISE TCAD simulation. The Early voltage shows a kink with the increase of the reverse base-collector bias. Large differences are observed between SOI devices and their bulk counterparts. The presented Early effect model can be employed for a fast evaluation of the Early voltage and is useful to the design, the simulation and the fabrication of high performance SOI SiGe devices and circuits.

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“…The x E (x C ) is the increase of the quasi-neutral base width due to a change in the emitter-base (collector-base) depletion layer width. [8,9] V…”

Section: Early Voltage Model For Soi Sige Hbtsmentioning

confidence: 99%

Early effect modeling of silicon-on-insulator SiGe heterojunction bipolar transistors

Xu¹,

Zhang²,

Hu³

et al. 2011

Chinese Phys. B

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“…Calculate Ce at selected temperature using equations from (5) to (12) Calculate n at T using ( Data at T r = 300 K and T = 240 K Results The error ΔV BE (T) introduced, neglecting the variation of emission coefficient with temperature, was estimated for transistors fabricated with different technologies, using (19). The results are shown in Table 2, where the error ΔV BE (T), expressed in equivalent temperature, was estimated considering a typical variation of −2 mV/…”

Section: Assessment Of N(t) Effect On V Be (T) the Estimation Of Emimentioning

confidence: 99%

“…Experimental measurements of η and V G0 in diffused wafers and in different types of bipolar transistors as reported elsewhere [7,10] showed a negative correlation between both parameters as reported in the literature. In order to improve V BE (T) description, direct and inverse early effects have been discussed elsewhere [11,12]. Nevertheless, the emitter emission coefficient n(T) and its influence on V BE (T) has not been well studied up to now.…”

Section: Introductionmentioning

confidence: 99%

Modeling and Extraction of Parameters Based on Physical Effects in Bipolar Transistors

Nagy¹,

Polanco²,

Álvarez³

2011

Active and Passive Electronic Components

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The rising complexity of electronic systems, the reduction of components size, and the increment of working frequencies demand every time more accurate and stable integrated circuits, which require more precise simulation programs during the design process. PSPICE, widely used to simulate the general behavior of integrated circuits, does not consider many of the physical effects that can be found in real devices. Compact models, HICUM and MEXTRAM, have been developed over recent decades, in order to eliminate this deficiency. This paper presents some of the physical aspects that have not been studied so far, such as the expression of base-emitter voltage, including the emitter emission coefficient effect (n), physical explanation and simulation procedure, as well as a new extraction method for the diffusion potential V DE (T), based on the forward biased base-emitter capacitance, showing excellent agreement between experimental and theoretical results.

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“…The relative Gummel number G B /G B0 can be split as follows using the concept of partitioning the base charge and the concept of Early voltages [6,7]…”

Section: Model Of the Early Effect Of Sige Hbtsmentioning

confidence: 99%

Generalized Early Voltage Model of Bipolar Transistors for Linearly Graded Germanium in Base

Zhang

et al. 2011

AMM

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The standard Early voltage of the SPICE Gummel-Poon model (SGP) is generalized for SiGe npn heterojunction bipolar transistors (HBTs). An accurate model for Early effects compatible with the SGP model is obtained considering graded germanium induced bandgap narrowing effect in the base in modern SiGe HBTs and simplified to a compact model which is consistent with ISE TCAD simulation results. The presentation of the Early effect model is significant for the design and simulation of the high performance SiGe BiCMOS technology.

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Generalised Early factor for compact modelling of bipolar transistors with non-uniform base

Cited by 8 publications

References 4 publications

Early effect modeling of silicon-on-insulator SiGe heterojunction bipolar transistors

Early effect modeling of silicon-on-insulator SiGe heterojunction bipolar transistors

Modeling and Extraction of Parameters Based on Physical Effects in Bipolar Transistors

Generalized Early Voltage Model of Bipolar Transistors for Linearly Graded Germanium in Base

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