General Model for Defect Dynamics in Ionizing‐Irradiated SiO<sub>2</sub>‐Si Structures

Song, Yu; Zhang, Guanghui; Cai, Xuefen; Dou, Baoying; Wang, Wenwen; Liu, Yang; Hong-Yu, Zhou; Zhong, Le; Dai, Gang; Zuo, Xu; Wei, Su‐Huai

doi:10.1002/smll.202107516

Cited by 10 publications

(31 citation statements)

References 70 publications

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“…A recent model for defect dynamics in irradiated Si-SiO 2 structures gives a better explanation of the dose dependences. 9 Because of the high level of lattice disorder in amorphous SiO 2 dispersive migration of the holes was assumed, which retards the generation of E ′ γ centers. Decay of the diffusion coefficient was also assumed while the irradiation is applied.…”

Section: Electron and Neutron Irradiation Of Amorphous And Microcryst...mentioning

confidence: 99%

“…However, the traditional model has problems with the explanation of experimentally observed dose dependencies of the defect concentrations, especially at a low dose rate. A recent model for defect dynamics in irradiated Si-SiO 2 structures gives a better explanation of the dose dependences . Because of the high level of lattice disorder in amorphous SiO 2 dispersive migration of the holes was assumed, which retards the generation of E ′ γ centers.…”

Section: Electron and Neutron Irradiation Of Amorphous And Microcryst...mentioning

confidence: 99%

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Electron and Neutron Beam Irradiation Effects in Homogeneous and Nanostructured Oxides

Nesheva

2023

ACS Omega

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Oxide-based materials have a variety of applications in chemical sensing and photocatalysis, thin-film transistors, complex-oxide field-effect transistors, nonvolatile memories, resistive switching, energy conversion, topological oxide electronics, and many others. The radiation resistance of these materials in such devices plays an important role in device operation in radiation environment, and this attracts much attention in the research area. In spite of damage in a number of cases high-energy particles may have a beneficial effect on the target. In this mini-review article examples of both creation of defects and beneficial changes in the structure and properties of homogeneous and nanostructured oxides caused by high-energy electron and neutron irradiation are given by considering some recently published results. First, the attention is turned to ionizing and displacement effects of electron and neutron irradiation in homogeneous bulk and thin-film oxides reported in the literature. Then, the effect of electron and neutron irradiation on nanostructured oxides and semiconductor nanoparticles embedded in an oxide matrix is regarded. Considerable attention is paid to silicon oxide layers since they are widely used in microelectronic products, which are among the most manufactured devices in human history. Processes of irradiation-induced lattice rearrangement, compositional changes, growth of nanoparticles and their size reduction, creation of point defects and their complexes, electron−hole generation, and charge trapping are discussed.

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Section: Electron and Neutron Irradiation Of Amorphous And Microcryst...mentioning

confidence: 99%

Section: Electron and Neutron Irradiation Of Amorphous And Microcryst...mentioning

confidence: 99%

Electron and Neutron Beam Irradiation Effects in Homogeneous and Nanostructured Oxides

Nesheva

2023

ACS Omega

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“…Small external factors can also stimulate the restructuring processes of existing nanoscale complexes and their clusters in semiconductor structures. This is mainly due to the excitation of the electronic subsystems of defects that exist on the silicon surface and at the Si-SiO 2 boundary [30][31][32][33][34][35][36]. In particular, small doses of ionizing radiation can cause the generation of non-equilibrium electrons and holes, which can be captured by defective complexes [30][31][32].…”

Section: Introductionmentioning

confidence: 99%

“…This is mainly due to the excitation of the electronic subsystems of defects that exist on the silicon surface and at the Si-SiO 2 boundary [30][31][32][33][34][35][36]. In particular, small doses of ionizing radiation can cause the generation of non-equilibrium electrons and holes, which can be captured by defective complexes [30][31][32]. A weak magnetic field can stimulate the reorientation of the electron spin of the atomic defects [33][34][35][36].…”

Section: Introductionmentioning

confidence: 99%

Radiative and Magnetically Stimulated Evolution of Nanostructured Complexes in Silicon Surface Layers

et al. 2022

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The effect of a weak magnetic field (B = 0.17 T) and X-irradiation (D < 520 Gy) on the rearrangement of the defective structure of near-surface p-type silicon layers was studied. It was established that the effect of these external fields increases the positive accumulated charge in the region of spatial charge (RSC) and in the SiO2 dielectric layer. This can be caused by both defects in the near-surface layer of the semiconductor and impurities contained in the dielectric layer, which can generate charge carriers. It was found that the near-surface layers of the barrier structures contain only one deep level in the silicon band gap, with an activation energy of Ev + 0.38 eV. This energy level corresponds to a complex of silicon interstitial atoms SiI+SiI. When X-irradiated with a dose of 520 Gy, a new level with the energy of Ev + 0.45 eV was observed. This level corresponds to a point boron radiation defect in the interstitial site (BI). These two types of defect are effective in obtaining charge carriers, and cause deterioration of the rectifier properties of the silicon barrier structures. It was established that the silicon surface is quite active, and adsorbs organic atoms and molecules from the atmosphere, forming bonds. It was shown that the effect of a magnetic field causes the decay of adsorbed complexes at the Si–SiO2 interface. The released hydrogen is captured by acceptor levels and, as a result, the concentration of more complex Si–H3 complexes increases that of O3–Si–H.

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“…[7,8] According to this assumption, it has been suggested that the LDR irradiation following HDR irradiation can reproduce the defect dynamics as induced by LDR-only irradiation. [9] In applications, a switched dose rate (SDR) technique [6,10] has been proposed to be equivalent to the LDR-only damage of bipolar devices.However, our recent work [11] demonstrated that HDR and LDR defect dynamics in SiO 2 -Si structures are governed by the same physics: decelerated generation of E 0 γ centers in disordered SiO 2 and reversible conversion between E 0 γ…”

mentioning

confidence: 98%

Mechanisms and Models for the Suppressed Defect Dynamics in SiO₂–Si Structures under High‐To‐Low Switched Dose Rate Irradiations

Song

2022

Physica Status Solidi (a)

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Ground tests of total ionizing dose (TID) irradiation of silicon (Si) electronic devices are usually carried out under an equivalent constant dose rate, and most theoretical investigations also focused on this ideal situation. However, the practical TID irradiation occurs with variable dose rates. [1] In space missions such as artificial satellites and Mars exploration, the irradiation dose rate changes dramatically as the mission goes on. [2] Especially, for anomalous areas in the South Atlantic (such as the International Space Station) or deep space exploration missions, the dose rate varies within several orders of magnitude, from 10 À5 to 10 rad(Si) s À1 . The time dependence of the concentrations of induced E 0 γ centers and P b centers (also denoted as N ot and N it in the literature) in the dielectric SiO 2 layer and at the SiO 2 /Si interface [3,4] are found to be different for high dose rate (HDR) and low dose rate (LDR) irradiations, especially for bipolar transistors, called as an enhanced low-dose-rate sensitivity (ELDRS) effect. [5] However, at present, it is widely accepted that these different HDR and LDR defect dynamics are relatively independent when they occur in succession. [6] The physical foundation is that HDR and LDR defect dynamics in SiO 2 -Si structures are dominated by different mechanisms, i.e., hole trapping mechanism for LDR and recombination mechanism for HDR, respectively. [7,8] According to this assumption, it has been suggested that the LDR irradiation following HDR irradiation can reproduce the defect dynamics as induced by LDR-only irradiation. [9] In applications, a switched dose rate (SDR) technique [6,10] has been proposed to be equivalent to the LDR-only damage of bipolar devices.However, our recent work [11] demonstrated that HDR and LDR defect dynamics in SiO 2 -Si structures are governed by the same physics: decelerated generation of E 0 γ centers in disordered SiO 2 and reversible conversion between E 0 γ

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General Model for Defect Dynamics in Ionizing‐Irradiated SiO₂‐Si Structures

Abstract: E − (red) due to a "phonon-kick" mechanism. The other three conversion processes in (c) and (b) are also enhanced by the recombination because of the vibrational excitations of the spring-like chemical bonds.

Cited by 10 publications

References 70 publications

Electron and Neutron Beam Irradiation Effects in Homogeneous and Nanostructured Oxides

Electron and Neutron Beam Irradiation Effects in Homogeneous and Nanostructured Oxides

Radiative and Magnetically Stimulated Evolution of Nanostructured Complexes in Silicon Surface Layers

Mechanisms and Models for the Suppressed Defect Dynamics in SiO₂–Si Structures under High‐To‐Low Switched Dose Rate Irradiations

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General Model for Defect Dynamics in Ionizing‐Irradiated SiO2‐Si Structures

Abstract: E − (red) due to a "phonon-kick" mechanism. The other three conversion processes in (c) and (b) are also enhanced by the recombination because of the vibrational excitations of the spring-like chemical bonds.

Cited by 10 publications

References 70 publications

Electron and Neutron Beam Irradiation Effects in Homogeneous and Nanostructured Oxides

Electron and Neutron Beam Irradiation Effects in Homogeneous and Nanostructured Oxides

Radiative and Magnetically Stimulated Evolution of Nanostructured Complexes in Silicon Surface Layers

Mechanisms and Models for the Suppressed Defect Dynamics in SiO2–Si Structures under High‐To‐Low Switched Dose Rate Irradiations

Contact Info

Product

Resources

About

General Model for Defect Dynamics in Ionizing‐Irradiated SiO₂‐Si Structures

Mechanisms and Models for the Suppressed Defect Dynamics in SiO₂–Si Structures under High‐To‐Low Switched Dose Rate Irradiations