Andreev reflection spectroscopy of ferromagnet-superconductor (FS) junctions is an important probe of spin polarization. We theoretically investigate spin-polarized transport in FS junctions in the presence of Rashba and Dresselhaus interfacial spin-orbit fields and show that Andreev reflection can be controlled by changing the magnetization orientation. We predict a giant in-and out-of-plane magnetoanisotropy of the junction conductance. If the ferromagnet is highly spin polarized-in the half-metal limit-the magnetoanisotropic Andreev reflection depends universally on the spin-orbit fields only. Our results show that Andreev reflection spectroscopy can be used for sensitive probing of interfacial spin-orbit fields in a FS junction. DOI: 10.1103/PhysRevLett.115.116601 PACS numbers: 72.25.-b, 74.25.F-, 75.47.-m, 85.75.-d Spin-orbit coupling (SOC) is a key interaction in spintronics [1][2][3], allowing an electrical control of magnetization and, vice versa, a magnetic control of electrical current. In systems lacking space inversion symmetry-be it bulk, hybrid structures, junctions-SOC induces spinorbit fields [1,2] as an emergent phenomenon. We are in particular concerned here with interfacial spin-orbit fields which are believed to be behind a wealth of new phenomena, not existent or fragile in the bulk, such as the tunneling anisotropic magnetoresistance (TAMR) [4][5][6][7], interfacial spin-orbit torques [8], or Skyrmions [9].Interfacial spin-orbit fields are also important in semiconductor-superconductor [10-13] and ferromagnetsuperconductor (FS) junctions [14] for creating Majorana quasiparticle states. It is the latter junctions that we focus on. We investigate the interplay of magnetism and spin-orbit fields. We show that this interplay leads to marked anisotropies in the junction conductance with respect to the orientation of magnetization. The most robust is the outof-plane anisotropy (plane being the interface), which arises from the omnipresent Rashba field [15]. A more subtle is the in-plane anisotropy, which arises from the interference between the Rashba and Dresselhaus [16] fields, induced by a twofold anisotropy of the C 2v type. A zinc-blende semiconductor (say, GaAs or InAs) as a barrier in an FS junction would create such an anisotropy, generating spin-orbit fields C 2v "butterfly" patterns, as shown by first-principles calculations [17]. Remarkably, the resulting magnetoconductance anisotropy-we term it magnetoanisotropic Andreev reflection (MAAR)-is giant in comparison to TAMR, its normal-state counterpart, reaching a universal behavior in the half-metallic case. This is because Andreev reflection (AR) (which has no counterpart in the normal-state TAMR) is strongly influenced by interfacial spin-orbit fields.We specifically examine the influence of SOC and crystalline anisotropy on the process of AR in which the reflected particle carries the information about both the phase of the incident particle and the macroscopic phase of the superconductor to which a Cooper pair is being transferre...