“…In state-of-the-art NFA OPVs, Δ V nr is ∼200 mV . This contrasts with inorganic technologies, where Δ V nr can reach <100 mV. , To address this deficit, the field has recently been focused on improving Φ PL of the low band gap component in a neat film, which is considered to provide the upper bound for Φ PL in a low-offset blend where recombination can proceed via the lowest energy S 1 state in the system. , In contrast to OLEDs, it had been noted that triplet management was a relatively understudied topic in OPVs. ,,− However, there have now been several recent reports on the critical role of recombination via T 1 in NFA OPVs. − As with OLEDs, it is generally expected that the T 1 state on the low band gap component will be the lowest energy excitation in the OPV system and could act as a trap state for nonradiative recombination . Indeed, the nongeminate recombination of free charge carriers in an OPV is also expected to produce, to a first approximation, 25% spin-singlet and 75% spin-triplet states following spin statistics .…”