Ge4+ doped CaCu2.95Zn0.05Ti4O12 ceramics: Two-step reduction of loss tangent

Effects of Charge Compensation on Colossal Permittivity and Electrical Properties of Grain Boundary of CaCu3Ti4O12 Ceramics Substituted by Al3+ and Ta5+/Nb5+

“…Colossal dielectric permittivity of ceramic oxides with very large dielectric constant (ε > 10 4 ) has been extensively studied for use in electronics applications, especially for capacitive-based devices such as ceramic capacitors [1][2][3][4][5][6][7][8][9][10][11]. Since the colossal dielectric permittivity of CaCu 3 Ti 4 O 12 (CCTO) ceramics was reported by Subramanian, et al [12], many simple and complex oxides such as NiO, ZnO, TiO 2 , SnO 2 , BiFeO 3 , and CCTObased ceramics, have been investigated [1][2][3][13][14][15][16][17][18][19][20][21][22][23][24].…”

Excellent dielectric and actuated strain properties in CCTOx@BT(1−x)@KH560/NR system via a tunable BaTiO3 interfacial buffer layer

“…The results show that all the samples have typical CCTO composite perovskite structure with a cubic phase, and the diffraction peaks of the main phase are exactly matched with the cubic phase CCTO standard powder diffraction pattern (JCPDS card number: 75‐2188). For all the composite ceramic samples except the main CCTO diffraction pattern, the second phase XRD peaks such as (100), (110), (111), (200), (211), and (220) correspond to the tetragonal BT standard powder diffraction pattern (JCPDS card number: 05‐0626) 30–33 . The XRD pattern strongly proved the successful preparation of CCTO x @BT (1− x ) particles.…”

Exceptional dielectric and varistor properties of Sr, Zn and Sn co-doped calcium copper titanate ceramics

“…) which opened up yet another window for obtaining CCTO ceramics with the improved dielectric response. [21][22][23][24][25][26] The aforementioned studies affirmed that the dopant ions result in modifying the chemical compositions of grain & grain boundaries (GBs) of CCTO ceramics and a consequent enhancement in dielectric performances which were rationalized by invoking IBLC models. 27 However, the arduous objective of accomplishing a high dielectric constant accompanied by low dielectric loss associated with doped CCTO ceramics is not yet realized.…”

“…20 Later, doping strategies were further extended to investigate into the simultaneous doping of cations at the lattice sites of (A & A′) with (La 2+ & Zn 2+ , Sr 2+ & Mg 2+ ), (A & B) with (Sr 2+ & Ni 4+ ), (A′ & B) with (Zn 2+ & Sn 4+ , Al 2+ & Ta 5+ , Zn 2+ & Ge 4+ ) which opened up yet another window for obtaining CCTO ceramics with the improved dielectric response. 21–26 The aforementioned studies affirmed that the dopant ions result in modifying the chemical compositions of grain & grain boundaries (GBs) of CCTO ceramics and a consequent enhancement in dielectric performances which were rationalized by invoking IBLC models. 27 However, the arduous objective of accomplishing a high dielectric constant accompanied by low dielectric loss associated with doped CCTO ceramics is not yet realized.…”