Ge₂Sb₂Te₅ Thin Film as a Promising Heat‐Mode Resist for High‐Resolution Direct Laser Writing Lithography

Abstract

Ge2Sb2Te5 thin film is investigated as a positive heat‐mode resist and environmentally‐friendlily FeCl3 solution is as means an efficient developer. The corrosion selectivity of exposed to as‐deposited thin film reaches 2.3 and the etching selectivity of Si to Ge2Sb2Te5 thin film is as high as 15.75. Moreover, high‐resolution nanostructures with minimum linewidth of 180 nm and period of 400 nm are obtained along with high resolution of 130 nm. In addition, the mechanism of corrosion selectivity between as‐deposited and exposed thin film is further elucidated based on microstructural analysis. Hence, Ge2Sb2Te5 thin film is a promising positive resist for high‐resolution direct laser writing lithography.This article is protected by copyright. All rights reserved.

Direct Laser Writing Dry Lithography of High‐Resolution Micro‐/Nanostructures in AgSb4Te Thin Film for Tunable Perfect Absorber

“…Thus, the developing rate of film will decrease again. The maximum developing selectivity reaches 17 at the CHF 3 gas flow of 40 SCCM, which is higher than those of Ge 2 Sb 1.5 Bi 0.5 Te 5 (≈3), [ 33 ] Ge 2 Sb 2 Te 5 (≈2), [ 35 ] and SbBi films (15). [ 36 ]…”