Ge-Sb-Te Chalcogenide Thin Films Deposited by Nanosecond, Picosecond, and Femtosecond Laser Ablation

Bulai, Georgiana; Pompilian, O. G.; Gurlui, Silviu; Němec, Petr; Nazabal, Virginie; Cimpoeşu, Nicanor; Chazallon, Bertrand; Focşa, Cristian

doi:10.3390/nano9050676

Cited by 18 publications

(7 citation statements)

References 49 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Second, the laser fluence must be large enough to exceed the ablation threshold which is for oxides typically of the order 1 J/cm 2 [ 20 , 22 – 25 ]. Alternatively, the pulse length can be varied from ns down to fs since the removal mechanism also varies with the time scale of the solid–laser interaction [ 26 – 28 ]. If the fluence is below the threshold, the target material is partially ejected and no plasma is formed.…”

Section: Plume Propertiesmentioning

confidence: 99%

PLD plasma plume analysis: a summary of the PSI contribution

Schneider

Lippert

2023

Appl. Phys. A

View full text Add to dashboard Cite

We report on the properties of laser-induced plasma plumes generated by ns pulsed excimer lasers as used for pulsed laser deposition to prepare thin oxide films. A focus is on the time and spatial evolution of chemical species in the plasma plume as well as the mechanisms related to the plume expansion. The overall dynamics of such a plume is governed by the species composition in particular if three or more elements are involved. We studied the temporal evolution of the plume, the composition of the chemical species in the plasma, as well as their electric charge. In particular, ionized species can have an important influence on film growth. Likewise, the different oxygen sources contributing to the overall oxygen content of an oxide film are presented and discussed. Important for the growth of oxide thin films is the compositional transfer of light element such as oxygen or Li. We will show and discuss how to monitor these light elements using plasma spectroscopy and plasma imaging and outline some consequences of our experimental results.

show abstract

Section: Plume Propertiesmentioning

confidence: 99%

PLD plasma plume analysis: a summary of the PSI contribution

Schneider

Lippert

2023

Appl. Phys. A

View full text Add to dashboard Cite

show abstract

“…Авторами работы [12] указанный пик был приписан колебаниям гомеополярной связи Sb−Sb, а авторами [13] -к кристаллизации образцов. Авторами работ [15,17,18] максимум при 160 см −1 связывался с активацией колебательных мод A 1g , и их появление считалось признаком образования кристаллических структурных элементов.…”

Section: экспериментальные результаты и обсуждениеunclassified

Влияние режима получения образцов и термообработки на локальную структуру халькогенидного полупроводника Ge-=SUB=-2-=/SUB=-Sb-=SUB=-2-=/SUB=-Te-=SUB=-5-=/SUB=-

Garibova

Isaev²,

Мехтиева³

et al. 2022

Физика И Техника Полупроводников

View full text Add to dashboard Cite

Specifics of "amorphous state - crystal" phase transitions in dependence on the samples obtaining method and thermal processing, as well as changes in the structure and close range order in the arrangement of the atoms of Ge20Sb20.5Te51 chalcogenide semiconductors have been studied by the x-ray diffraction and Raman spectroscopy. It has been shown that Ge20Sb20.5Te51 films obtained by thermal evaporation on an unheated substrate are amorphous; after heat treatment at 220 and 400 °C, transform into a crystalline phase with a cubic and hexagonal structure. The chemical bonds and the main structural elements that form the matrix of the investigated objects, as well as the changes that occur in them during heat treatment, have been determined.

show abstract

“…Such properties could potentially result in photonic metadevices having high optical contrast, low power consumption, high operational speed and large endurance [29,30]. In addition, PCM thin film deposition processes such as magnetron sputtering [26,41], pulsed laser deposition [46] or chemical vapour depostion and atomic layer deposition [47] are well-stablished, and optical memories based on the use of PCM thin films have been commercially available for several decades [29]. Similarly, the fabrication methods for PCM metasurfaces are well established, and take advantage of fairly standard e-beam or optical lithography and lift-off and/or wet/plasma etching techniques [27,28,30,[35][36][37][38][39][40][41][42].…”

Section: Introductionmentioning

confidence: 99%

Tunable optical metasurfaces enabled by chalcogenide phase-change materials: from the visible to the THz

Galarreta

Carrillo

et al. 2020

J. Opt.

View full text Add to dashboard Cite

Metasurfaces and nanoantennas are redefining what can be achieved in terms of optical beam manipulation, as they provide a versatile design platform towards moulding the flow of light at will. Yet, once a conventional metasurface is designed and realised, its effect on optical beams is repeatable and stationary, thus its performance is 'locked-in' at the fabrication stage. A much wider range of applications, such as dynamic beam steering, reconfigurable and dynamic lensing, optical modulation and reconfigurable spectral filtering, could be achieved if real-time tuning of metasurface optical properties were possible. Chalcogenide phase-change materials, because of their rather unique ability to undergo abrupt, repeatable and non-volatile changes in optical properties when switched between their amorphous and crystalline phases, have in recent years been combined with metasurface architectures to provide a promising platform for the achievement of dynamic tunability. In this paper, the concept of dynamically tunable phase-change metasurfaces is introduced, and recent results spanning the electromagnetic spectrum from the visible right through to the THz regime are presented and discussed. The progress, potential applications, and possible future perspectives of phase-change metasurface technology are highlighted, and requirements for the successful implementation of real-world applications are discussed.

show abstract

Ge-Sb-Te Chalcogenide Thin Films Deposited by Nanosecond, Picosecond, and Femtosecond Laser Ablation

Cited by 18 publications

References 49 publications

PLD plasma plume analysis: a summary of the PSI contribution

PLD plasma plume analysis: a summary of the PSI contribution

Влияние режима получения образцов и термообработки на локальную структуру халькогенидного полупроводника Ge-=SUB=-2-=/SUB=-Sb-=SUB=-2-=/SUB=-Te-=SUB=-5-=/SUB=-

Tunable optical metasurfaces enabled by chalcogenide phase-change materials: from the visible to the THz

Contact Info

Product

Resources

About