Abstract:Interfacial reactions for the Co/Ge and Ge/Co contact systems on (001)-oriented n-type GaAs substrates were studied with emphasis on Ge-rich stoichiometries−Co:Ge=1:1 and 2:3. Following annealing at temperatures up to 350 °C, intermetallic compounds of cobalt and germanium were formed, depending on the Co:Ge atomic ratio, while the inner interface with the GaAs substrate remained intact. At higher temperatures (up to 600 °C, the highest temperature used) a limited reaction with the GaAs substrate was detected.… Show more
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