Ge-on-GaAs film resistance thermometers for cryogenic applications

Mitin, V. F.; McDonald, Paul C.; Pavese, Franco; Болтовец, Н. С.; Kholevchuk, V. V.; Nemish, I. Yu.; Basanets, Volodymyr V.; Dugaev, V. K.; Sorokin, P.; Конакова, Р. В.; Venger, É. F.; Mitin, E. V.

doi:10.1016/j.cryogenics.2007.04.014

Cited by 47 publications

(19 citation statements)

References 19 publications

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“…Heterogeneous integration of Ge and GaAs has attracted much attention due to their promising applications in optoelectronic devices such as solar cells and dual band optical sensors because of the expanded spectral coverage [1][2][3][4][5]. The negligible distinction in the lattice constants and thermal expansion coefficients of Ge and GaAs poses convenience for this heterogeneous integration.…”

Section: Introductionmentioning

confidence: 99%

P-type Ge epitaxy on GaAs (100) substrate grown by MOCVD

Jin

Chia

Liu

et al. 2016

Applied Surface Science

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Section: Introductionmentioning

confidence: 99%

P-type Ge epitaxy on GaAs (100) substrate grown by MOCVD

Jin

Chia

Liu

et al. 2016

Applied Surface Science

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“…The precise measurement of temperature is crucial in a wide range of areas, including cryogenics, biology, engineering, chemical reaction monitoring, and safety …”

Section: Introductionmentioning

confidence: 99%

Visible‐Light Excited Luminescent Thermometer Based on Single Lanthanide Organic Frameworks

Zhu

Zhou

et al. 2016

Adv Funct Materials

194

123

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Isostructural lanthanide organic frameworks (Me2NH2)3[Ln3(FDC)4(NO3)4]·4H2O (Ln = Eu (1), Gd (2), Tb (3), H2FDC = 9‐fluorenone‐2,7‐dicarboxylic acid), synthesized under solvothermal conditions, feature a Ln‐O‐C rod‐packing 3D framework. Time‐resolved luminescence studies show that in 1 the energy difference between the H2FDC triplet excited state (17794 cm−1) and the 5D0 Eu3+ level (17241 cm−1) is small enough to allow a strong thermally activated ion‐to‐ligand back energy transfer. Whereas the emission of the ligand is essentially constant the 5D0→7F2 intensity is quenched when the temperature increases from 12 to 320 K, rendering 1 the first single‐lanthanide organic framework ratiometric luminescent thermometer based on ion‐to‐ligand back energy transfer. More importantly, this material is also the first example of a metal organic framework thermometer operative over a wide temperature range including the physiological (12‐320 K), upon excitation with visible light (450 nm).

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“…Accurate temperature measurement is required for many cryogenic sensors. However, it is always as a curse due to the obvious magnetoresistance under high magnetic fields [9]. Currently, the main components of the most commercially adapted bulks are carbon, carbon-glass and carbon ceramic, and the thin films are based on ruthenium oxide and ceramic nitride oxide (CERNOX), which show typical magnetic-field-induced resistance errors of 1.5% at 4.2 K under 15 T [10].…”

Section: Introductionmentioning

confidence: 99%

Solution Processable CrN Thin Films: Thickness-Dependent Electrical Transport Properties

Hui

Zuo

et al. 2020

Materials

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Thickness is a very important parameter with which to control the microstructures, along with physical properties in transition-metal nitride thin films. In work presented here, CrN films with different thicknesses (from 26 to 130 nm) were grown by chemical solution deposition. The films are pure phase and polycrystalline. Thickness dependence of microstructures and electrical transport behavior were studied. With the increase of films thickness, grain size and nitrogen content are increased, while resistivity, zero-field sensitivity and magnetoresistance are decreased. In the temperature range of 5–350 K, all samples exhibited semiconductor-like properties with dρ/dT < 0. For the range above and below the Néel temperature, the resistivity can be fitted by the thermal activation model and the two-dimensional weak localization (2D-WL) model, respectively. The ultra-low magnetoresistance at a low temperature under high magnetic fields with a large zero-field sensitivity was observed in the CrN thin films. The zero-field sensitivity can be effectively tuned to 10−2 K−1 at 5 K with a magnetoresistance of less than 1% at 2 K under 14 T by reasonably controlling the thickness.

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Ge-on-GaAs film resistance thermometers for cryogenic applications

Cited by 47 publications

References 19 publications

P-type Ge epitaxy on GaAs (100) substrate grown by MOCVD

P-type Ge epitaxy on GaAs (100) substrate grown by MOCVD

Visible‐Light Excited Luminescent Thermometer Based on Single Lanthanide Organic Frameworks

Solution Processable CrN Thin Films: Thickness-Dependent Electrical Transport Properties

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