Ge
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           interface layer reduction upon Al-gate deposition on a HfO2∕GeOx∕Ge(001) stack

Rangan, Sylvie; Bersch, Eric; Bartynski, Robert; Garfunkel, Eric; Vescovo, E.

doi:10.1063/1.2917480

Cited by 19 publications

(9 citation statements)

References 11 publications

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“…It is noted that a similar Al/HfO 2 interface layer was also observed in Al/HfO 2 /Ge MOS structures, as reported in Ref. 34. Second, the presence of the Al gate "scavenges" the In 0.53 Ga 0.47 As interfacial oxide layer and the HfO 2 /In 0.53 Ga 0.47 As interface oxide is almost gone in the region under the Al gate.…”

Section: Resultssupporting

confidence: 51%

An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors

Lin

Gomeniuk

Monaghan

et al. 2013

Journal of Applied Physics

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In this work, we present the results of an investigation into charge trapping in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors (MOS capacitors), which is analysed using the hysteresis exhibited in the capacitance-voltage (C-V) response. The availability of both n and p doped In0.53Ga0.47As epitaxial layers allows the investigation of both hole and electron trapping in the bulk of HfO2 and Al2O3 films formed using atomic layer deposition (ALD). The HfO2/In0.53Ga0.47As and Al2O3/In0.53Ga0.47As MOS capacitors exhibit an almost reversible trapping behaviour, where the density of trapped charge is of a similar level to high-k/In0.53Ga0.47As interface state density, for both electrons and holes in the HfO2 and Al2O3 films. The experimental results demonstrate that the magnitude of the C-V hysteresis increases significantly for samples which have a native oxide layer present between the In0.53Ga0.47As surface and the high-k oxide, suggesting that the charge trapping responsible for the C-V hysteresis is taking place primarily in the interfacial oxide transition layer between the In0.53Ga0.47As and the ALD deposited oxide. Analysis of samples with a range of oxide thickness values also demonstrates that the magnitude of the C-V hysteresis window increases linearly with the increasing oxide thickness, and the corresponding trapped charge density is not a function of the oxide thickness, providing further evidence that the charge trapping is predominantly localised as a line charge and taking place primarily in the interfacial oxide transition layer located between the In0.53Ga0.47As and the high-k oxide. (C) 2013 AIP Publishing LLC

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Section: Resultssupporting

confidence: 51%

An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors

Lin

Gomeniuk

Monaghan

et al. 2013

Journal of Applied Physics

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“…These results are in contrast with what has been found for other metals such as Al, for which interfacial Al 2 O 3 layer has been shown to develop upon metallization of other high-stacks, thus preventing a simple use of the MIGS model. 25 Due to its low oxygen affinity, Ru does not disrupt the high-/ SiO 2 / Si stack upon deposition by creating an interfacial RuO x layer, and appears as a good metal model for MIGS testing.…”

Section: Discussionmentioning

confidence: 99%

Band offsets of a ruthenium gate on ultrathin high-κoxide films on silicon

et al. 2009

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grown on silicon͒ and their shifts upon sequential metallization with ruthenium have been measured using synchrotronradiation-excited x-ray, ultraviolet, and inverse photoemissions. From these techniques, the offsets between the valence-band and conduction-band edges of the oxides, and the ruthenium metal gate Fermi edge have been directly measured. In addition the core levels of the oxides and the ruthenium have been characterized. Upon deposition, Ru remains metallic and no chemical alteration of the underlying oxide gates, or interfacial SiO 2 in the case of the high-thin films, can be detected. However a clear shift of the band edges is measured for all samples due to the creation of an interface dipole at the ruthenium-oxide interface. Using the energy gap, the electron affinity of the oxides, and the ruthenium work function that have been directly measured on these samples, the experimental band offsets are compared to those predicted by the induced gap states model.

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“…1 In the development of Gebased MISFET devices, controlled formation of the surface oxide in a wide variety of ways is important for precise fabrication of dielectric/Ge interfaces. [2][3][4][5][6][7][8][9][10][11][12][13] Therefore, atomic-level understanding of the oxidation of Ge surfaces, especially in the monolayer or sub-monolayer region, is a key research issue. However, the fundamental aspects of the oxidation reaction of Ge surfaces are not well understood, which is in strong contrast to Si surfaces.…”

Section: Introductionmentioning

confidence: 99%

In situ synchrotron radiation photoelectron spectroscopy study of the oxidation of the Ge(100)-2 × 1 surface by supersonic molecular oxygen beams

Yoshigoe

Teraoka

Okada

et al. 2014

The Journal of Chemical Physics

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In situ synchrotron radiation photoelectron spectroscopy was performed during the oxidation of the Ge(100)-2 × 1 surface induced by a molecular oxygen beam with various incident energies up to 2.2 eV from the initial to saturation coverage of surface oxides. The saturation coverage of oxygen on the clean Ge(100) surface was much lower than one monolayer and the oxidation state of Ge was +2 at most. This indicates that the Ge(100) surface is so inert toward oxidation that complete oxidation cannot be achieved with only pure oxygen (O2) gas, which is in strong contrast to Si surfaces. Two types of dissociative adsorption, trapping-mediated and direct dissociation, were confirmed by oxygen uptake measurements depending on the incident energy of O2. The direct adsorption process can be activated by increasing the translational energy, resulting in an increased population of Ge2+ and a higher final oxygen coverage. We demonstrated that hyperthermal O2 beams remarkably promote the room-temperature oxidation with novel atomic configurations of oxides at the Ge(100) surface. Our findings will contribute to the fundamental understanding of oxygen adsorption processes at 300 K from the initial stages to saturated oxidation.

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Ge O x interface layer reduction upon Al-gate deposition on a HfO2∕GeOx∕Ge(001) stack

Cited by 19 publications

References 11 publications

An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors

An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors

Band offsets of a ruthenium gate on ultrathin high-κoxide films on silicon

In situ synchrotron radiation photoelectron spectroscopy study of the oxidation of the Ge(100)-2 × 1 surface by supersonic molecular oxygen beams

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