Ge islands on Si(111) at coverages near the transition from two-dimensional to three-dimensional growth

Shklyaev, A. A.; Shibata, Motoshi; Ichikawa, Masakazu

doi:10.1016/s0039-6028(98)00580-9

Cited by 50 publications

(37 citation statements)

References 30 publications

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“…The same phenomenon has been noticed by Shklyaev, Shibata, and Ichikawa in the case of Ge/Si͑111͒. 71 Voigtländer and Zinner noted that Ge 3D islands in Ge/Si͑111͒ epitaxy have been observed at the same locations where 2D islands locally exceeded the critical wetting layer thickness of two bilayers. 13 Contrary to the linear theory of elasticity, the anharmonicity and nonconvexity of real interatomic potentials lead to different intervals of existence of misfit dislocations in compressed and expanded overlayers.…”

Section: Discussionsupporting

confidence: 76%

Coherent Stranski-Krastanov growth in 1+1 dimensions with anharmonic interactions: An equilibrium study

Korutcheva

Turiel²,

Markov

2000

Phys. Rev. B

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The formation of coherently strained three-dimensional ͑3D͒ islands on top of the wetting layer in the Stranski-Krastanov mode of growth is considered in a model in 1 ϩ 1 dimensions accounting for the anharmonicity and nonconvexity of the real interatomic forces. It is shown that coherent 3D islands can be expected to form in compressed rather than expanded overlayers beyond a critical lattice misfit. In expanded overlayers the classical Stranski-Krastanov growth is expected to occur because the misfit dislocations can become energetically favored at smaller island sizes. The thermodynamic reason for coherent 3D islanding is incomplete wetting owing to the weaker adhesion of the edge atoms. Monolayer height islands with a critical size appear as necessary precursors of the 3D islands. This explains the experimentally observed narrow size distribution of the 3D islands. The 2D-3D transformation takes place by consecutive rearrangements of monoto bilayer, bi-to trilayer islands, etc., after the corresponding critical sizes have been exceeded. The rearrangements are initiated by nucleation events, each one needing to overcome a lower energetic barrier than the one before. The model is in good qualitative agreement with available experimental observations.

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Section: Discussionsupporting

confidence: 76%

Coherent Stranski-Krastanov growth in 1+1 dimensions with anharmonic interactions: An equilibrium study

Korutcheva

Turiel²,

Markov

2000

Phys. Rev. B

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“…21 The same phenomenon has been observed by Shklyaev et al in the case of Ge/Si(111). 22 These observations suggest a process of rearrangement as mentioned above. Voigtländer and Zinner noted that 3D Ge islands have been observed in the same locations on the Si(111) surface where 2D islands locally exceeded the critical thickness of the wetting layer of two bilayers.…”

mentioning

confidence: 53%

Quantum-dot nucleation in strained-layer epitaxy: Minimum-energy pathway in the stress-driven two-dimensional to three-dimensional transformation

Prieto

Markov

2005

Phys. Rev. B

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The transformation of monolayer islands into bilayer islands as a first step of the overall twodimensional to three-dimensional (2D-3D) transformation in the coherent Stranski-Krastanov mode of growth is studied for the cases of expanded and compressed overlayers. Compressed overlayers display a nucleation-like behavior: the energy accompanying the transformation process displays a maximum at some critical number of atoms, which is small for large enough values of the misfit, and then decreases gradually down to the completion of the transformation, non-monotonically due to the atomistics of the process. On the contrary, the energy change in expanded overlayers increases up to close to the completion of the transformation and then abruptly collapses with the disappearance of the monoatomic steps to produce low-energy facets. This kind of transformation takes place only in materials with strong interatomic bonding. Softer materials under tensile stress are expected to grow predominantly with a planar morphology until misfit dislocations are introduced, or to transform into 3D islands by a different mechanism. It is concluded that the coherent StranskiKrastanov growth in expanded overlayers is much less probable than in compressed ones for kinetic reasons.

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“…To reduce the lattice strain, several mechanisms can take place, such as Ge-Si intermixing, introduction of misfit dislocations and their motion, and changes in surfaces morphology. The behavior of Ge layers on Si surfaces has been studied in details for the low Ge thicknesses up to several nanometers and for the temperatures up to about 700 1C [1][2][3][4][5][6][7]. The Ge growth on Si(1 1 1) proceeds through the formation of a Ge wetting layer with the thickness of 2-3 bilayers (BL) [1,3].…”

Section: Introductionmentioning

confidence: 99%

Strain-induced Ge segregation on Si at high temperatures

Shklyaev

Ponomarev

2015

Journal of Crystal Growth

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Ge islands on Si(111) at coverages near the transition from two-dimensional to three-dimensional growth

Cited by 50 publications

References 30 publications

Coherent Stranski-Krastanov growth in 1+1 dimensions with anharmonic interactions: An equilibrium study

Coherent Stranski-Krastanov growth in 1+1 dimensions with anharmonic interactions: An equilibrium study

Quantum-dot nucleation in strained-layer epitaxy: Minimum-energy pathway in the stress-driven two-dimensional to three-dimensional transformation

Strain-induced Ge segregation on Si at high temperatures

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