Ge/GeSn heterostructures grown on Si (100) by molecular-beam epitaxy

Sadofyev, Yu. G.; Martovitsky, V. P.; Bazalevsky, M. A.; Klekovkin, A. V.; Averyanov, Dmitry V.; Васильевский, И. С.

doi:10.1134/s1063782615010248

Cited by 12 publications

(9 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The presence of a surface structure on a buffer layer is not desired, as this structure may prevent the epitaxial growth of a following film and can promote the formation of structural defects at the buffer/film interface. However, in the present case, the surface roughness of the Ge buffer is very low (~ 5 Ge atomic steps in the (001) direction), and such a Ge buffer can be used as virtual substrate to grow pseudo-coherent Sn-rich Ge 1x Sn x layers, as reported in the case of CVD and MBE growth [54][55][56][57][58][59][60][61][62][65][66][67][68][69][70][71][72][73][74].…”

Section: Ge Buffer Growthmentioning

confidence: 78%

“…Consequently, if the surface contamination level stays low, the texture of polycrystalline Si, Ge and Ge 1x Sn x films generally shows a large fraction of grains exhibiting the {111} and {113} crystallographic orientations in the direction parallel to the film surface. The relaxed Ge lattice parameter a rel is expected to be ~ 0.565 nm at RT [69]. In the - XRD geometry used in this study, the measured plane spacing corresponds to plane spacing in the direction perpendicular to the film surface and is thus denoted…”

Section: Ge Buffer Growthmentioning

confidence: 99%

“…The Ge film is significantly relaxed and should contain a high concentration of dislocations [52][53][54][55][56][57][58][59][60][61][62][64][65][66][67][68][69][70][71][72][73][74]. The height of these islands varies typically between 1 and 3 nm (fig.…”

Section: Ge Buffer Growthmentioning

confidence: 99%

See 2 more Smart Citations

Ge(Sn) growth on Si(001) by magnetron sputtering

Khelidj

Portavoce

Bertoglio

et al. 2021

Materials Today Communications

View full text Add to dashboard Cite

The semi-conductor Ge 1x Sn x exhibits interesting properties for optoelectronic applications. In particular, Ge 1x Sn x alloys with x  0.1 exhibit a direct band-gap, and integrated in complementary-metal-oxide-semiconductor (CMOS) technology, should allow the development of Si photonics. CMOS-compatible magnetron sputtering deposition was shown to produce monocrystalline Ge 1x Sn x films with good electrical properties at low cost. However, these layers were grown at low temperature (< 430 K) and contained less than 6% of Sn. In this work, Ge 1x Sn x thin films were elaborated at higher temperature (> 600 K) on Si(001) by magnetron sputtering in order to produce low-cost and CMOS-compatible relaxed pseudocoherent layers with x ≥ 0.1 exhibiting a better crystallinity. Ge 1x Sn x crystallization and Ge 1x Sn x crystal growth were investigated. Crystallization of an amorphous Ge 1x Sn x layer deposited on Si(001) or Ge(001) grown on Si(001) leads to the growth of polycrystalline films. Furthermore, the competition between Ge/Sn phase separation and Ge 1x Sn x growth prevents the formation of large-grain Sn-rich Ge 1x Sn x layers without the formation of -Sn islands on the layer surface, due to significant atomic redistribution kinetics at the crystallization temperature (T = 733 K for x = 0.17). However, the growth at T = 633 K of a highly-relaxed pseudo-coherent Ge 0.9 Sn 0.1 film with low impurity concentrations (< 2 × 10 19 at cm 3 ) and an electrical resistivity four orders of 2 magnitude smaller than undoped Ge is demonstrated. Consequently, magnetron sputtering appears as an interesting technique for the integration of optoelectronic and photonic devices based on Ge 1x Sn x layers in the CMOS technology.

show abstract

Section: Ge Buffer Growthmentioning

confidence: 78%

Section: Ge Buffer Growthmentioning

confidence: 99%

See 1 more Smart Citation

Ge(Sn) growth on Si(001) by magnetron sputtering

Khelidj

Portavoce

Bertoglio

et al. 2021

Materials Today Communications

View full text Add to dashboard Cite

show abstract

“…In [9], we showed that the annealing of relatively thick (~0.5 μm) GeSn layers results in radical coarsening of the surface microrelief. According to AFM data, the root-mean-square (rms) roughness of the surface could attain several tens of nanometers.…”

Section: Properties Of the Grown Structuresmentioning

confidence: 98%

“…A detailed description of the equipment, features of the growth technology, and properties of the Si/Ge/GeSn structures are given in [9]. The germanium buffer layers on gallium arsenide were grown after cleaning of the substrate surface of natural oxides by heating in the growth chamber of the MBE installation.…”

Section: Growth Of Experimental Samplesmentioning

confidence: 99%

Sn-enriched Ge/GeSn nanostructures grown by MBE on (001) GaAs and Si wafers

et al. 2015

Self Cite

View full text Add to dashboard Cite

Elastically stressed metastable GeSn layers with a tin molar fraction as large as 0.185 are grown on (001) Si and GaAs wafers covered with a germanium buffer layer. A set of wafers with a deviation angle in the range 0°-10° is used. It is established that the GeSn crystal undergoes monoclinic deformation with the angle β to 88° in addition to tetragonal deformation. Misorientation of the wafers surface results in increasing efficiency of the incorporation of tin adatoms into the GeSn crystal lattice. Phase separation in the solid solution upon postgrowth annealing of the structures begins long before the termination of plastic relaxation of elastic heteroepitaxial stresses. Tin released as a result of GeSn decomposition predominantly tends to be found on the surface of the sample. Manifestations of the brittle-plastic mechanism of the relaxation of stresses resulting in the occurrence of microcracks in the subsurface region of the structures under investigation are found.

show abstract