Ge Diffusion in SnTe Crystal

Abstract

This work is devoted to the study of Ge diffusion in crystalline Sn1-δTe1+8 with δ=0.0065±0.0008 in temperature range T=878-973 K by electron probe microanalysis and layer by layer X-ray analysis. For the latter lattice constant dependence on composition was determined: a(Å)=a(SnTe)-(0.368±0.008)× where 0<×<0. 1. Activation energy was found to be about 1.3 eV, much less than in the case of Ge diffusion in PbTe.