1999
DOI: 10.1016/s0025-5408(99)00159-2
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GdTiGe (CeScSi-type structure) and GdTiGe (CeFeSi-type structure) as the coherent phases with different magnetic and hydrogenization properties

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Cited by 20 publications
(26 citation statements)
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“…For a magnetic point of view, the RMgX (X = Ga, In) compounds exhibit a low temperature antiferromagnetic order but they crystallize in the ZrNiAl-type [19][20][21][22], while the CeScSi-type compounds were generally ferromagnets [2,3,[8][9][10][11][12][13]. Consequently, the RMgSn compounds (R = Pr, Nd, Sm, Gd-Tm) represent the first CeScSi-type series with antiferromagnetic behavior.…”
Section: Resultsmentioning
confidence: 99%
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“…For a magnetic point of view, the RMgX (X = Ga, In) compounds exhibit a low temperature antiferromagnetic order but they crystallize in the ZrNiAl-type [19][20][21][22], while the CeScSi-type compounds were generally ferromagnets [2,3,[8][9][10][11][12][13]. Consequently, the RMgSn compounds (R = Pr, Nd, Sm, Gd-Tm) represent the first CeScSi-type series with antiferromagnetic behavior.…”
Section: Resultsmentioning
confidence: 99%
“…2). The coexistence of these two type structures has been evidenced for the GdTiGe compound [2][3][4], and derived alloys [5]. Recently, this structural transition has been observed by insertion of carbon or boron atoms in the CeFeSi-type RTiGe compounds [6,7].…”
Section: Introductionmentioning
confidence: 99%
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“…139) [1][2][3] and order antiferromagnetically with T N ranging from 2.5 K for TmMgPb to 79 K for SmMgSn [3,4]. A few other compounds in the RTX series (where T is a transition metal and X is a p-block element) such as PrScSi [5], PrScGe [5,6], and ErZrSb [7] are antiferromagnetic at low temperatures, while most CeScSi-type compounds are ferromagnetic at low temperatures: RScSi (R = Ce,Nd,Sm,Gd) [5,[8][9][10], RScGe (R = Ce − Nd,Sm,Gd,Tb) [5,6,[8][9][10][11][12][13][14], RZrSb (R = Gd − Tm) [7,15], and RTiGe (R = Gd,Tb) [16][17][18][19][20].…”
Section: Introductionmentioning
confidence: 99%
“…The intermetallic compounds GdTiGe and GdTiSi are also characterized by the essentially high temperatures: for CeScSi-type GdTiGe the T C = 376 K [4], for CeFeSi-type GdTiGe the T N = 412 K [5] and for CeFeSi-type GdTiSi T C = 294 K [6]. A number of experiments on the temperature dependence of magnetic and kinetic properties have been performed to clarify the relationship between the electronic and magnetic structures of these alloys.…”
Section: Introductionmentioning
confidence: 99%