GdFe_0.8Ni_0.2O₃: A Multiferroic Material for Low-Power Spintronic Devices with High Storage Capacity

Abstract

Multiferroic materials are strong candidates for reducing the energy consumption of voltage-controlled spintronic devices because of the coexistence of ferroelectric (FE) and magnetic orders in a single phase. In this article, we present a new multiferroic perovskite, GdNi x Fe 1−x O 3 (GFNO), produced via sputtering on a SrTiO 3 substrate. The proposed GFNO is FE and canted antiferromagnetic (AFM) within a monoclinic framework at room temperature. The FE polarization of the GFNO is up to 37 μC/cm 2 . When capped with a Co layer, the resulting heterostructure exhibits voltage-controlled magnetism (VCM). The heterostructured device exhibits two distinct features. First, its VCM depends on the magnitude as well as the polarity of the applied bias, thereby doubling the number of available magnetic readout states under a fixed voltage. Furthermore, the magnetic order of the device can be controlled very effectively within ±1 V. These two characteristics satisfy the requirements for low-power and highstorage technology. Theoretical analysis and experimental results indicate the importance of Ni dopant in regulating the polarity-dependent multiferroicity of this gadolinium ferrite system.

Pulse-Mediated Electronic Tuning of the MoS2–Perovskite Ferroelectric Field Effect Transistors

“…Details of XPS fitting are presented in Figure S8. Note that the GFNO was grown at 750 °C , and followed by postannealing at 850 °C for 30 min before being used as a substrate for MoS 2 . It is reasonable therefore to expect that annealing at 500/400/300 °C would affect only the MoS 2 .…”

“…GFNO perovskite thin films , were grown on a Si substrate. Prior to film deposition, the sputtering chamber was evacuated to <6.66 × 10 –4 Pa to avoid contamination.…”

“…However, this integration is still in its early stages, unlike work on the electrical, mechanical, and optical properties of TMD devices. This paper presents a unique MoS 2 /GdFe 0.8 Ni 0.2 O 3 (MoS 2 /GFNO) heterostructure device capable of pulse-controlled MoS 2 phase transition in the ferroelectric perovskite GFNO layer. , Chang et al , previously described GFNO as a novel multiferroic compound featuring coupled FE and antiferromagnetic orders at room temperature. The FE and magnetic orders of GFNO are highly responsive to bias/pulse polarity.…”

Synergy Effect of Temperature, Electric and Magnetic Field on the Depth Structure of the Ferh/Batio3 Composite Multiferroic

“…Due to the enormous increase of the world's energy consumption [1,2], the development of new, highly optimized and energy efficient devices are indispensable to maintain [3]. Composite multiferroics [4,5] are among the few novel materials that can be used to increase the efficiency of devices based on the principles of spintronics [6,7,8], magnetic switching [9,10,11], magnetic refrigeration [12,13,14,15], biomechanical energy harvesting [16,17,18], giant magnetoresistance [19,20,21] and photovoltaics [22,23,24].…”

Phase driven magnetic and optoelectronic properties of La2CrNiO6: A DFT and Monte Carlo perspective

“…Based on these properties, the double perovskites have been applied in storage devices [15], magnetic cooling technologies [12], spintronics [16,17], opto-electronics [18], piezoelectrics [19] etc. For spintronics devices, a ferromagnetic insulator along with a non magnetic conductor restricts the electron transport through the non magnetic region.…”