“…As a result of double-glow plasma carburizing of the Ti2AlNb orthorhombic alloy, the layer of 40 µm with a hardness of 1051 HV and decreasing carbon content develops [77]. Also plasma carburizing of pure titanium in hydrogen free atmosphere is capable of creating the superficial carburized layer with special characteristics [78]. Of novel applications, carburizing of silicon is portrayed as an inexpensive in situ method of forming graphene on silicon wafer [79].…”