Gawliket al.Reply:

Abstract

Gawlik et al. Reply:The Comment [1] avoids the main point of our Letter [2], namely, that for HgSe there is no evidence for a bulk conduction band state crossing or touching the valence band maximum determined by photoemission spectroscopy excited with different photon energies. This is a fundamental criterion for a metallic band structure. Therefore, from our experimental data an inverted band structure model for HgSe is not supported.Furthermore, the discussion of quantized charge accumulation states as performed by the authors of the Comment has no relevance for the conclusion of HgSe being a positive gap semiconductor and, in addition, it cannot explain the energy position of a quantized state in the charge accumulation layer which we have observed experimentally. Our data clearly show a state S 0 0.51 eV above the valence band maximum revealing no dispersion with variation of photon energy (or k Ќ ) but distinct dispersion with emission angle (or k k ) (see Figs. 1 and 2 of Ref. 2). Thus S 0 reveals two-dimensional character and may be assigned to a quantized state in the charge accumulation layer. The structure at 0.4 eV (which we have assigned to the conduction band minimum), in contrast, does show significant dispersion with variation of photon energy ͑k Ќ ͒ (it can be observed only in photoemission for photon energies around 12 eV) and thus cannot be quantized in the charge accumulation layer. The Comment is incorrect in assigning this state to a two-dimensional ground electric subband. In addition, the first excited subband (calculated by the authors of the Comment to lie at 0.625 eV) cannot be observed in the experimental spectra. Instead we ob-1536 0031-9007͞98͞81(7)͞1536(1)$15.00

(Invited) Raman Stress Measurements at the Nanoscale

“…The procedure of locally etching the continuous sGe fins and introduction of SiGe in the etched-out regions is expected to lead to stress relaxation along the fins, while the stress in the across direction is assumed to be unaffected. Despite the interruption of the fins in the ECS Transactions, 86 (7) 311-320 (2018) parallel direction over a length scale much smaller than the laser wavelength, the Raman scattering from the sGe region is still increased under parallel orientation with the incident polarization, albeit with a lower enhancement factor compared to continuous fins (4,21). This enables the same analysis with independent LO and TO phonon excitation as in the case of intact fins and hence the determination of stress relaxation upon S/D integration in the fins.…”

Relativistic effects in the optical response of HgSe by time‐dependent density functionals theory

“…Recently, the nature of the material HgSe was debated, whether it is a small‐gap semiconductor or a semimetal in the zinc blend structure. Experimentally, as determined using photoemission spectroscopy 4, there seemed to be no evidence of a bulklike conduction band that either crosses or touches the valence‐band maximum, hence favoring it to be a small‐gap (0.42 eV) semiconductor. On the other hand, conductivity, optical and magneto‐optical measurements 5, compiled in Ref.…”

The Stellar 72Ge(n, γ) Cross Section for weak s-process: A First Measurement at n_TOF

“…This proceeding reports on the 72 Ge(n, γ) measurement performed at n_TOF. Lastly, there are more capture cross section results on other stable germanium isotopes from n_TOF recently [5][6][7]. * e-mail: mirco.dietz@ptb.de…”