Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays

Jeon, Sanghun; Ahn, Sungyoon; Song, Ihun; Kim, Chang Jung; Chung, U‐In; Lee, Eunha; Yoo, In-Kyeong; Nathan, Arokia; Lee, Sungwon; Ghaffarzadeh, Khashayar; Robertson, John; Kim, Kinam

doi:10.1038/nmat3256

Cited by 458 publications

(495 citation statements)

References 31 publications

(60 reference statements)

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“…30 They also represent a large improvement over OPTs based on amorphous oxide semiconductors, where persistent photoconductivity (PPC) can last for several hours or days. 31 As reported for other OPTs, s d can be improved to less than 0.5 s (i.e., the temporal resolution of our setup) by applying a short gate pulse (2s, V GS ¼ À10 V), which causes a full release of -reset), and <0.5 s (with gate-reset), respectively, and rise time of s r faster than 500 ms.…”

Section: -supporting

confidence: 73%

Ultrasensitive organic phototransistors with multispectral response based on thin-film/single-crystal bilayer structures

Pinto

Gouveia

Neves

et al. 2015

Applied Physics Letters

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We report on highly efficient organic phototransistors (OPTs) based on thin-film/single-crystal planar bilayer junctions between 5,6,11,12-tetraphenyltetracene (rubrene) and [6,6]-phenyl-C61-butyric acid methyl ester (PC61BM). The OPTs show good field-effect characteristics in the dark, with high hole-mobility (4–5 cm2 V−1 s−1), low-contact resistance (20 kΩ cm), and low-operating voltage (≤5 V). Excellent sensing capabilities allow for light detection in the 400–750 nm range, with photocurrent/dark current ratio as high as 4 × 104, responsivity on the order of 20 AW−1 at 27 μW cm−2, and an external quantum efficiency of 52 000%. Photocurrent generation is attributed to enhanced electron and hole transfer at the interface between rubrene and PC61BM, and fast response times are observed as a consequence of the high-mobility of the interfaces. The optoelectronic properties exhibited in these OPTs outperform those typically provided by a-Si based devices, enabling future applications where multifunctionality in a single-device is sought.

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Section: -supporting

confidence: 73%

Ultrasensitive organic phototransistors with multispectral response based on thin-film/single-crystal bilayer structures

Pinto

Gouveia

Neves

et al. 2015

Applied Physics Letters

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“…3 High responsivity, high photosensitivity, low noise, and stable performance have always been key factors in the assessment of a good photodetector, but now extra demands are being made of these devices.…”

Section: Introductionmentioning

confidence: 99%

“…From these measurements we show that dye-sensitization increases the device photosensitivity and responsivity to all incident wavelengths, with the biggest effect observed under green light illumination. Best performing phototransistors exhibit a maximum responsivity of ~2×10 3 A/W and a photosensitivity of 1×10 6 . Due to its ultrathin nature, the photoactive In2O3/D102 layer is extremely transparent with a minimum transmission of 92 % across all visible wavelengths (400-700 nm).…”

Section: Introductionmentioning

confidence: 99%

Quasi Two-Dimensional Dye-Sensitized In₂O₃ Phototransistors for Ultrahigh Responsivity and Photosensitivity Photodetector Applications

Mottram

Lin

Pattanasattayavong

et al. 2016

ACS Appl. Mater. Interfaces

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We report the development of dye-sensitized thin-film phototransistors consisting of an ultra-thin layer (<10 nm) of indium oxide (In2O3) the surface of which is functionalized with a selfassembled monolayer of the light absorbing organic dye D102. The resulting transistors exhibit a preferential color photoresponse centered in the wavelength region of ~500 nm with a maximum photosensitivity of ~10 6 and a responsivity value of up to 2×10 3 A/W. The high photoresponse is attributed to internal signal gain and more precisely to charge carriers generated upon photoexcitation of the D102 dye which lead to the generation of free electrons in the semiconducting layer and to the high photoresponse measured. Due to the small amount of absorption of visible photons the hybrid In2O3/D102 bilayer channel appears transparent with an average optical transmission of >92 % in the wavelength range 400-700 nm. Importantly, the phototransistors are processed from solution-phase at temperatures below 200 °C hence making the technology compatible with inexpensive and temperature sensitive flexible substrate materials such as plastic.

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“…24,25,38 "V" configuration shows the maximum photocurrent responsivity of 10.3 μA/W at 3.08 eV (403 nm). Unlike "L" configuration, the responsivity increases as the illumination energy increases.…”

Section: Resultsmentioning

confidence: 99%

Dual Mode Photocurrent Generation of Graphene-Oxide Semiconductor Junction

Jeong

Heo

Kyoung

et al. 2015

ECS J. Solid State Sci. Technol.

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The need for low-cost and highly versatile photosensing devices keeps increasing. In this work, we present a heterojunction device based on wafer-scale graphene grown by chemical vapor deposition (CVD) and sputtered InGaZnO (IGZO) semiconductor for dual mode photocurrent collection. The photocurrent can be collected either from the lateral gold/graphene/gold configuration or from the vertical graphene/IGZO/nickel heterojunction configuration with no external bias. Incident-energy-dependent photocurrent scanning microscopy shows that the dominant photocarriers are formed at the edge of the gold electrode through photo-thermoelectric hot hole generation in the lateral configuration. Vertical mode renders unidirectional current flow by photoexcited electrons in the IGZO and the subsequent relaxation and diffusion due to Fowler-Nordheim potential. © 2015 The Electrochemical Society. [DOI: 10.1149/2.0071512jss] All rights reserved.Manuscript submitted July 7, 2015; revised manuscript received September 9, 2015. Published September 22, 2015 Graphene is a two dimensional carbon-chained material that has been extensively studied for promising photonic and optoelectronic applications.1-3 Zero bandgap and a fast carrier relaxation process in intrinsic graphene facilitate ultra-broadband and ultrafast light detectors. [4][5][6][7] Under light illumination, graphene with lateral contact electrodes generates photocurrent through a photovoltaic, bolometric, or photo-thermoelectric mechanisms depending on bias and gating conditions. [8][9][10][11][12][13][14][15] Recently, photodetectors based on graphene heterojunctions have been extensively highlighted. Currently, Schottky-barrier-type vertical heterojunctions composed of graphene/silicon, [16][17][18][19][20] reduced-graphene-oxide (RGO)/silicon, 21 and RGO/silicon nanowire 22 have been successfully demonstrated. Unlike lateral photocurrent collection, the vertical junctions take advantage of an asymmetric barrier potential to efficiently separate photoexcited electrons and holes, which might pave the way for light detection with large active areas without the need for external source-drain bias.Here, we demonstrate a heterojunction device capable of dual mode photocurrent collection under zero source-drain bias based on a graphene grown by chemical vapor deposition (CVD) and amorphousphase indium gallium zinc oxide (IGZO). Here, dual mode means that the photocurrent can flow either from a lateral pair of the electrodes or from a vertical pair of electrodes. Versatile photodetection schemes allow to broaden the range of selection for applications such as photoenergy harvesting, phototransistor, and photoconductive detector. 1,2,14 Unlike silicon, IGZO semiconductors can be grown on glass substrates at low temperatures, typically below 200• C so that large area device fabrication is possible. IGZO has been widely used for image sensors, flat-panel displays, and thin film transistors. [23][24][25] The typical mobility of the IGZO film is about 10-60 cm 2 /Vs. 23,25,26 Interes...

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Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays

Cited by 458 publications

References 31 publications

Ultrasensitive organic phototransistors with multispectral response based on thin-film/single-crystal bilayer structures

Ultrasensitive organic phototransistors with multispectral response based on thin-film/single-crystal bilayer structures

Quasi Two-Dimensional Dye-Sensitized In₂O₃ Phototransistors for Ultrahigh Responsivity and Photosensitivity Photodetector Applications

Dual Mode Photocurrent Generation of Graphene-Oxide Semiconductor Junction

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Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays

Cited by 458 publications

References 31 publications

Ultrasensitive organic phototransistors with multispectral response based on thin-film/single-crystal bilayer structures

Ultrasensitive organic phototransistors with multispectral response based on thin-film/single-crystal bilayer structures

Quasi Two-Dimensional Dye-Sensitized In2O3 Phototransistors for Ultrahigh Responsivity and Photosensitivity Photodetector Applications

Dual Mode Photocurrent Generation of Graphene-Oxide Semiconductor Junction

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Quasi Two-Dimensional Dye-Sensitized In₂O₃ Phototransistors for Ultrahigh Responsivity and Photosensitivity Photodetector Applications