Gate Voltage Matching Investigation for Low-Power Analog Applications

Joly, Y.; Lopez, L.; Truphemus, L.; Portal, Jean‐Michel; Aziza, Hassen; Julien, Franck; Fornara, P.; Masson, Pascal Le; Ogier, Jean-Luc; Bert, Y.

doi:10.1109/ted.2013.2237778

Cited by 11 publications

(7 citation statements)

References 15 publications

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“…The figure of merit used to quantify analytically the device mismatching of electrical parameters has adopted in this work is the coefficient of variation [ɛr(%)] in percentage (%), due to CMOS ICs manufacturing process variations, which is given by Equation (2) [10][11][12][13]. Ideally, the electrical parameters must not vary with the increasing TID.…”

Section: Device Matching Analysismentioning

confidence: 99%

“…Knowing that analog CMOS ICs are strongly influenced by the devices mismatch [10][11][12][13], the objective of this paper is to study the impact of the Diamond layout style for MOSFETs (n-type) on the devices mismatching, for devices V. V. Peruzzi 1 , W. S. Cruz 1 , G. A. Silva 1 , E. Simoen 2 , C. Claeys 3 , and S. P. Gimenez 1 that are not biased during the irradiation procedure (those spare parts or electronics that are not used during a space mission and posteriorly their functionalities are checked on the Earth for future uses).…”

Section: Introductionmentioning

confidence: 99%

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Using the Hexagonal Layout Style for MOSFETs to Boost the Device Matching in Ionizing Radiation Environments

Peruzzi

Cruz²,

Silva³

et al. 2020

JICS

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This paper describes an experimental comparative study of the matching between conventional (rectangular gate shape) and Diamond (hexagonal gate geometry) n-channel Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (MOSFETs), which were manufactured in an 130 nm Silicon-Germanium Bulk Complementary MOS (CMOS) technology and exposed to different X-rays Total Ionizing Doses (TIDs). The results indicate that the Diamond layout style with alpha () angle equal to 90˚ for MOSFETs is capable of boosting the device matching by at least 17% regarding the electrical pa-rameters studied (Threshold Voltage and Subthreshold Slope) as compared with the conventional MOSFET counterparts, considering that they present the same gate area, channel width, bias conditions and for the same TID. This is due to the Longitudinal Corner Effect (LCE). Parallel MOSFETs with Different Channel Length Effect (PAMDLE) and Deactivation of Parasitic MOSFETs in the Bird’s Beak Regions Effect (DEPAMBBRE) present in the structure of Diamond MOSFETs. Therefore, the Diamond layout style can be consid-ered an alternative hardness-by-design (HBD) layout strategy to boost the electrical performance and TID tolerance of MOSFETs enabling analog or radio-frequency CMOS inte-grated circuits (ICs) applications.

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Section: Device Matching Analysismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Using the Hexagonal Layout Style for MOSFETs to Boost the Device Matching in Ionizing Radiation Environments

Peruzzi

Cruz²,

Silva³

et al. 2020

JICS

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“…Em função disto, deve-se considerar a tensão de dreno (VDS) como sendo inferior à sobretensão de porta (VGT = VGS -VTH), isto é, na região linear da curva, de tal forma que se pode desconsiderar o termo VDS 2 da equação (4) [1], [50], [49], [48]. A RDSon é dada pela equação (6), considerando-se um nMOSFET (Bulk) [41,42,43,44].…”

Section: Resistência Entre Dreno E Fonte De Estado Ligado (Rdson)unclassified

“…A inclinação de sublimiar apresentou uma variação cerca de 8% menor no OM em comparação ao seu CM equivalente, nas mesmas condições de polarização e de exposição às radiações ionizantes [39]. Ademais, uma outra maneira de se estudar a variabilidade dos parâmetros elétricos e figuras de mérito de dispositivos eletrônicos e como estes podem ser afetados em várias condições de operação, como por exemplo em ambientes de radiação ionizantes, é por meio do estudo do descasamento entre dispositivos [41], [42], [43].…”

Section: 212 Introduçãounclassified

“…Entre os trabalhos publicados relacionados ao estudo do descasamento entre dispositivos, utilizou-se a aplicação do conceito de variância estatística da tensão de limiar de dispositivos nMOS em um efeito parasita que pode ter um forte impacto no casamento de tensão de porta de pares diferenciais e, como consequência, no desempenho do circuito analógico [41]. Assim, por meio da análise da variância da tensão de limiar, várias soluções foram propostas para limitar ou remover esse efeito parasita [41].…”

Section: 212 Introduçãounclassified

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Estudo do casamento entre MOSFETs implementados com geometrias de porta não convencionais em ambientes de radiações de raios X

Peruzzi¹

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This doctoral thesis illustrates the studies of the variability and mismatch between "N" type MOSFET devices (nMOSFETs) with hexagonal (DnM), octagonal (OnM) and rectangular (CnM) gate geometry, considering four different types of bias of these nMOSFETs during the ionizing radiation procedure X-ray: I- without electrical bias or with all terminals (source, door, drain and substrate) open (Floating); II- with electrical bias of the devices in the operating state of “on-state” or “closed-switch” (On-state); III- with bias of the devices in the condition of analogue operation or operating as an amplifier (Analog); IV- with device bias in the state-off or “open-switch” operating condition (Off-state). Considering the Floating bias, during the Xray ionizing radiation procedure, it appears that DnMs with an a angle of 90° reduce the mismatch between devices by 40.7% for the threshold voltage (VTH) and 56.8% for the subthreshold slope (SS), respectively, in comparison to the values found in the CnMs counterparts. Considering the On-state bias during the procedure of X-ray ionizing radiation, it is observed that OnMs with an a angle of 90° and a 50% “c” factor improve the matching between devices by 57.4% for VTH and 54.9% for SS compared to those found in CnM counterparts. In the Analog and Off-state bias during the X-ray ionizing radiation procedure, the DnMs and OnMs showed a better matching between devices compared to those obtained with the CnMs counterparts and with a 95% accuracy level. During the procedure of X-ray ionizing radiation in Floating mode, the maximum total ionizing dose (TID) used was in the order of up to 4.5 Mrad. In addition, during ionizing X-ray radiation procedures in On-State, Off-State and Analog modes, the maximum TIDs used were 200 krad for On-State and Analog modes and 20 krad for Off-State mode. Therefore, the Diamond and Octo layout styles can be considered as alternative layout strategies for the implementation of MOSFETs in order to enhance their tolerances to ionizing X-ray radiation, aiming at applications in integrated circuits (ICs) implemented with Complementary Metal-Oxide-Semiconductor (CMOS) manufacturing technology

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MEPNTC: A Standard-Cell Library Design Scheme Extending the Minimum-Energy-Point Operation of Near-$V_{th}$ Computing

Ranasinghe

Gerez

2020

2020 IEEE 38th International Conference on Computer Design (ICCD)

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Gate Voltage Matching Investigation for Low-Power Analog Applications

Cited by 11 publications

References 15 publications

Using the Hexagonal Layout Style for MOSFETs to Boost the Device Matching in Ionizing Radiation Environments

Using the Hexagonal Layout Style for MOSFETs to Boost the Device Matching in Ionizing Radiation Environments

Estudo do casamento entre MOSFETs implementados com geometrias de porta não convencionais em ambientes de radiações de raios X

MEPNTC: A Standard-Cell Library Design Scheme Extending the Minimum-Energy-Point Operation of Near-$V_{th}$ Computing

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