Gate Voltage-Dependence of Junction Capacitance in MOSFETs

Kuk, Jinwook; Lee, Seonghearn

doi:10.1109/ted.2021.3101999

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B Driving a Ferroelectric Thin-lm Transistor Using Ferroele...1

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2022

2024

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Cited by 3 publications

(2 citation statements)

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“…It would be caused by charge trapping assisted polarization switching. As previously reported by Kuk et al, 37,49 the nFeFET can operate by only electron trapping/de-trapping without holes, which would be like this a-ITZO FeTFT case.…”

Section: B Driving a Ferroelectric Thin-lm Transistor Using Ferroele...supporting

confidence: 64%

Demonstration of programmable light intensity of a micro-LED with a Hf-based ferroelectric ITZO TFT for Mura-free displays

et al. 2023

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Section: B Driving a Ferroelectric Thin-lm Transistor Using Ferroele...supporting

confidence: 64%

Demonstration of programmable light intensity of a micro-LED with a Hf-based ferroelectric ITZO TFT for Mura-free displays

et al. 2023

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“…The reduction in junction capacitance, which reduces the delay, is one of the key advantages of replacing Bulk technology with SOI technology [2]. Furthermore, in the application of RF switches, junction capacitance in the OFF state is critical [3]. Therefore analysis of junction capacitance and its modeling is highly recommendable.…”

Section: Introductionmentioning

confidence: 99%

Analytical modeling of junction capacitance using Trapezoidal Approximation for source and drain Engineered Partially depleted Silicon on Insulator.

Baby

Pradeep

U.S

2022

Preprint

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Junction capacitance variation in Source-Drain Engineered Partially Depleted Silicon On Insulator(SDE-PDSOI), due to the geometry effects of source and drain are discussed in this paper. Reduction in sidewall junction capacitance at saturation is caused by reduced charge due to geometrical variation of source and drain. Junction capacitance is modeled and validated with numerical simulations. Trapezoidal approximation is applied to extract the depletion width and the junction capacitance is evaluated. Modulation of the depletion width with varying potential along the channel thickness is also presented.

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Investigation of junction capacitance in Zener tunnelling tunnel diode partially depleted silicon on insulator

Baby,

Pradeep,

Shikha

2024

Micro and Nanostructures

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Gate Voltage-Dependence of Junction Capacitance in MOSFETs

Cited by 3 publications

References 8 publications

Demonstration of programmable light intensity of a micro-LED with a Hf-based ferroelectric ITZO TFT for Mura-free displays

Demonstration of programmable light intensity of a micro-LED with a Hf-based ferroelectric ITZO TFT for Mura-free displays

Analytical modeling of junction capacitance using Trapezoidal Approximation for source and drain Engineered Partially depleted Silicon on Insulator.

Investigation of junction capacitance in Zener tunnelling tunnel diode partially depleted silicon on insulator

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