The group-IV monochalcogenide monolayers, GeSe, are interesting
and novel two-dimensional (2D) semiconductor materials due to their
highly anisotropic physical properties. Monolayers of the different
GeSe polymorphs have already had their physical properties and potential
applications extensively investigated. However, few-layer homostructures,
which can also be approximated as 2D systems in many cases, have
not received the same attention. For this reason, in this work, we
investigate the optical properties of a free-standing few-layer β-GeSe
system and use this information to investigate their performance in
the near-field radiative heat transfer (NFRHT). The required optical
conductivity of the few-layer 2D material is calculated by using density
functional theory (DFT), including spin–orbit coupling. The
band structure is investigated for up to five layers, and the effective
electron masses are calculated correspondingly. Using this information,
both the intraband transitions due to the presence of free electrons
introduced by doping and the interband transitions are considered.
The contribution of the ionic vibrations is also included in calculating
the optical properties because of its relevance to NFRHT through the
resulting active optical phonons. With all these contributions included,
more realistic predictions of the NFRHT between the layered 2D β-GeSe
materials can be obtained. It is found that the heat transfer attainable
with the layered system is similar to that of a single layer of β-GeSe
we have obtained previously.