Two-dimensional ferromagnetic/antiferromagnetic (2D-FM/AFM)
heterostructures
are of great significance to realize the application of spintronic
devices such as miniaturization, low power consumption, and high-density
information storage. However, traditional mechanical stacking can
easily damage the crystal quality or cause chemical contamination
residues for 2D materials, which can result in weak interface coupling
and difficulty in device regulation. Chemical vapor deposition (CVD)
is an effective way to achieve a high-quality heterostructure interface.
Herein, high-quality interface 2D-FM/AFM Cr7Te8/MnTe vertical heterostructures were successfully synthesized via
a one-pot CVD method. Moreover, the atomic-scale structural scanning
transmission electron microscope (STEM) characterization shows that
the interface of the vertical heterostructure is clear and flat without
an excess interface layer. Compared to the parent Cr7Te8, the coercivity (H
C) of the high-quality
interface Cr7Te8/MnTe heterostructure is significantly
reduced as the thickness of MnTe increases, with a maximum decrease
of 74.5% when the thickness of the MnTe nanosheet is around 30 nm.
Additionally, the H
C of the Cr7Te8/MnTe heterostructure can also be regulated by applying
a gate voltage, and the H
C increases or
decreases with increasing positive or negative gate voltages. Thus,
the effective regulation of H
C is essential
to improving the performance of advanced spintronic devices (e.g.,
MRAM and magnetic sensors). Our work will provide ideas for spin controlling
and device application of 2D-FM/AFM heterostructures.