Gate-tunable electroluminescence in Aviram–Ratner-type molecules: Kinetic description

Петров, Е. С.; Gorbach, Victor V.; Ragulya, A. V.; Lyubchik, Andrey; Lyubchik, Svetlana B.

doi:10.1063/5.0018574

Cited by 8 publications

(1 citation statement)

References 56 publications

(108 reference statements)

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“…Partly, these problems are figure out by applying thin films of Au, Pd and Ag on the surface of refractory met als, or by selecting composite layers from various metals. For these purposes, the method of magnetron sputtering or ion-beam doping is usually used [7][8][9][10][11][12]. However, these metals are expensive and therefore, in the production 2 of microchips, they seek to replace these metals with cheaper ones -Al, Cu.…”

Section: Introductionmentioning

confidence: 99%

Elemental Composition of Copper Films Deposited on the Surface of Metals Fe, V, and Ti at the Plasma Focus Facility

Eriskin,

Kobzev,

Kolokoltsev

et al. 2023

Preprint

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Thin Cu films with a thickness of ~0.5-2.5 mkm were obtained on the surface of Fe, V, and Ti metals using the Plasma Focus (PF) setup. The Cu film thickness was determined on an Ambios XP-200 profilometer. The distribution profiles of Cu, C, О2, N2 and H2 in initial metal samples: Fe, V, and Ti were studied by layer-by-layer analysis on a GDS 850A atomic emission spectrometer. It is shown that the distribution profile and the depth of occurrence of elements depend on the type of metal. Using the method of Rutherford Backscattering Spectrometry (RBS) of 4He+ ions, it was shown that for Cu atoms the depth of occurrence in Fe, V, and Ti, accordingly, is ~106, ~120, and ~160 nm. The depth of occurrence of C atoms in metals: Fe, V, and Ti is ~150, ~120, and ~200 nm, accordingly. From the data of layer-by-layer analysis on an atomic emission spectrometer in the initial samples of metals: Fe, V and Ti, a transition layer with a thickness of ~0.01, accordingly, was found; 0.5 and 1 mm. The presence of this layer is connected with the mechanical processing of metal samples, and the presence of a large number of admixtures in the thin layer of the metal. Thus, Cu atoms are located in the transition layer under the metal surface, which imparts adhesion and electrophysical properties of Cu films.

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Section: Introductionmentioning

confidence: 99%

Elemental Composition of Copper Films Deposited on the Surface of Metals Fe, V, and Ti at the Plasma Focus Facility

Eriskin,

Kobzev,

Kolokoltsev

et al. 2023

Preprint

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Features of optoelectronic processes in a molecular junction based on a fluorophore with optically active Frontier π-orbitals: electrofluorochromism in a ZnPc-based junction

Petrov,

Kapitanchuk,

Shevchenko

et al. 2024

Phys. Chem. Chem. Phys.

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Gate-tunable step-like current through a single-molecule junction

Петров

Teslenko

2022

Low Temperature Physics

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Using the kinetic approach, analytical expressions are obtained for the sequential and direct tunneling components of the current in a molecular junction, where the molecule acts as a mediator for interelectrode electron transfer. Within the framework of the modified HOMO-LUMO model, it is shown that the current components are not independent even with weak interaction of the molecule with the electrodes but are interrelated kinetically through processes that lead to the occupation of the electronic states of a charged and neutral molecule. As an application of the theory, the critical voltages determining the ranges of resonant steplike electron transfer through a junction with a planar ZnPc molecule are estimated. The values of the gate voltages at which the junction is capable of performing the functions of photoemitter are presented.

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Gate-tunable electroluminescence in Aviram–Ratner-type molecules: Kinetic description

Abstract: Note: This paper is part of the JCP Special Topic on 65 Years of Electron Transfer.

Cited by 8 publications

References 56 publications

Elemental Composition of Copper Films Deposited on the Surface of Metals Fe, V, and Ti at the Plasma Focus Facility

Elemental Composition of Copper Films Deposited on the Surface of Metals Fe, V, and Ti at the Plasma Focus Facility

Features of optoelectronic processes in a molecular junction based on a fluorophore with optically active Frontier π-orbitals: electrofluorochromism in a ZnPc-based junction

Gate-tunable step-like current through a single-molecule junction

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