Gate-Source Distance Scaling Effects in H-Terminated Diamond MESFETs

Abstract

Abstract-In this paper, an analysis of gate-source and gate-drain scaling effects in MESFETs fabricated on hydrogenterminated single-crystal diamond films is reported. The experimental results show that a decrease in gate-source spacing can improve the device performance by increasing the device output current density and its transconductance. On the contrary, the gate-drain distance produces less pronounced effects on device performance. Breakdown voltage, knee voltage, and threshold voltage variations due to changes in gate-source and drainsource distances have also been investigated. The obtained results can be used as a design guideline for the layout optimization of H-terminated diamond-based MESFETs.

Enhanced surface transfer doping of diamond by V2O5 with improved thermal stability

“…Details on the epitaxial growth of the intrinsic layer are reported in Ref. 23. Prior to hydrogen termination, two nominally identical samples were cleaned in HNO 3 :HCI followed by H 2 SO 4 :HNO 3 to remove any metallic and organic adsorbents.…”

“…The experimental work in this study was carried out in two stages using (i) 4.7 mm 2 boron doped single crystal diamond 19 grown via chemical vapour deposition (CVD) on a type IIa (001) CVD sample (Element Six) and (ii) two intrinsic single crystal CVD diamonds 23 grown on Ib HPHT diamond substrates: stage 1-Photoemission spectroscopy (PES) of the H-diamond/V 2 O 5 interface and stage 2-Electrical characterisation of the subsurface hole channel in the diamond formed by V 2 O 5 and air-induced surface transfer doping.…”

Direct determination of the barrier height of Au ohmic-contact on a hydrogen-terminated diamond (001) surface

“…The other studies of R C at RT resulted in various values of ~110 -6 , ~110 -5 , 0.04 cm 2 [18][19][20]. Barrier heights were not evaluated in the later three studies [18][19][20].…”

Ohmic contact between iridium film and hydrogen-terminated single crystal diamond

“…To enhance better performance of diamond electronic devices, an excellent ohmic contact between electrode metal layer and diamond is needed 9,19–24 . Up to now, many investigations of ohmic contact between metal and diamond have been reported, such as gold (Au), platinum (Pt) and palladium (Pd) on hydrogen-terminated single crystal diamond, all of which yield important role in diamond device development so far 9,25,26 . However, Au could peel off during fabrication process, which indicates quite poor adherence of Au on hydrogen-terminated single crystal diamond film 9 .…”