Gate oxide reliability assessment of a SiC MOSFET for high temperature aeronautic applications

Santini, Thomas; Morand, S.; Miller, F.; Phung, Luong Viêt; Allard, Bruno

doi:10.1109/ecce-asia.2013.6579125

Cited by 39 publications

(24 citation statements)

References 9 publications

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“…SiC has three times higher energy gap and seven times higher electric breakdown field that allow SiC to have higher voltage withstand capability. In addition to high voltage withstand capability, SiC has three times higher electron velocity than Si, that leads to operate SiC at high switching frequencies [1][2][3][4][5]. High voltage and high switching capability of SiC resulted in commercially available active and passive power devices like MOSFET, normally on and off JFETs, BJT and Schottky diode at 1200V from different manufacturers.…”

Section: Introductionmentioning

confidence: 99%

“…In [8], switching performance and robustness of two 1200V SiC MOSFETs from different manufacturers are compared. Gate oxide reliability of SiC MOSFETs for more-electric-aircraft applications is discussed in [4]. Switching performance evaluation of Si and SiC for avionic applications in [9] shows that SiC devices have ten times less switching losses in comparison to Si devices for given operating conditions.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Testing of a Lightweight SiC Power Module for Avionic Applications

Gurpinar

Lopez-Arevalo

et al. 2014

7th IET International Conference on Power Electronics, Machines and Drives (PEMD 2014)

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Functional and performance tests of a three-phase, two-level power module based on CREE 1.2kV SiC MOSFETs for avionic applications is presented in this paper. SiC devices have superior properties over conventional Si devices at high voltage operations and these properties make SiC devices attractive for avionic industry in order to reduce size of power electronic converters while maintaining high efficiency. This paper starts with a brief explanation of thermo-mechanical design approach of SiC power module. Thermo-mechanical design is followed by test setup and experimental results for different load and switching frequency conditions. The module is tested up to 540V DC link voltage, 6kW output power with 100kHz switching frequency. Experimental results show that the module can be successfully operated with high efficiency at high switching frequencies.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Testing of a Lightweight SiC Power Module for Avionic Applications

Gurpinar

Lopez-Arevalo

et al. 2014

7th IET International Conference on Power Electronics, Machines and Drives (PEMD 2014)

View full text Add to dashboard Cite

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“…As previously reported in [12] the mechanism of threshold voltage instability appears to be major limitation for the implementation of SiC MOSFETs in aeronautical applications.…”

Section: Extrapolation To Nominal Conditionsmentioning

confidence: 72%

“…For these tests, the drain current value was kept at 150 lA. Given the oxide thickness of the tested devices, the maximum electric field in the oxide has been carefully defined to remain below the Fowler-Nordheim regime to prevent time dependent dielectric breakdown failures which occurs at high oxide electric field conditions [12].…”

Section: Observation Of Threshold Voltage Instability Mechanismmentioning

confidence: 99%

Accelerated degradation data of SiC MOSFETs for lifetime and Remaining Useful Life assessment

Santini

Morand

Fouladirad

et al. 2014

Microelectronics Reliability

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“…However, the SiC technology is fairly new and numerus studies on the reliability of SiC MOSFETs have pointed out several issues arising from imperfections in oxide quality, threshold stability, and body-diode ruggedness (among others) [9]- [12]. With the recently introduced 3 rd generation of SiC MOSFETs from Wolspeed, which is the leader on the market, the oxide layer stability and bodydiode ruggedness seem to have improved [13].…”

Section: Introductionmentioning

confidence: 99%

Introduction of SiC MOSFETs in converters based on Si IGBTs

Sadik

Colmenares

Jurgensen

et al. 2017

2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia (IFEEC 2017 - ECCE Asia)

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Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have the potential to increase the power density in power electronics converters compared to the currently used silicon (Si). Their benefits are higher efficiency, higher switching speeds, and higher operating temperatures. Moreover, SiC MOSFETs, which are normally-off, offer the possibility to directly replace Si Isolated-Gate-Bipolar-Transistors (IGBTs) in already existing converter designs with minimal circuit changes. Nevertheless, as an emerging technology, the reliability performance remains to be investigated. A reliability analysis has been performed based on a full-bridge resonant converter rated at 60 kW for modern Electrostatic Precipitator (ESP) power supplies. This analysis shows that introducing SiC devices will increase the lifetime of the converter while reducing the losses. The investment costs of replacing the Si IGBTs with SiC MOSFETs can thus be covered with the reduction of the losses over the economical operational lifetime. Furthermore, a theoretical analysis on how introducing SiC MOSFETs could increase the power density of the converter while maintaining the efficiency and the reliability. Finally, an analysis on introducing redundancy as a way to improve the reliability of the system has been performed.

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Gate oxide reliability assessment of a SiC MOSFET for high temperature aeronautic applications

Cited by 39 publications

References 9 publications

Testing of a Lightweight SiC Power Module for Avionic Applications

Testing of a Lightweight SiC Power Module for Avionic Applications

Accelerated degradation data of SiC MOSFETs for lifetime and Remaining Useful Life assessment

Introduction of SiC MOSFETs in converters based on Si IGBTs

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