Gate Oxide Degradation Condition Monitoring Technique for High-Frequency Applications of Silicon Carbide Power MOSFETs

Naghibi, Javad; Mohsenzade, Sadegh; Mehran, Kamyar; Foster, M. P.

doi:10.1109/tpel.2022.3198291

Cited by 10 publications

(3 citation statements)

References 28 publications

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“…However, it is worth noting that these systems tend to be cost-intensive due to their requirement for transducing rapidly changing physical quantities. This is especially true for SiC MOSFET, which can exhibit dynamics reaching even MHz levels in resonant converters [9][10][11][12][13][14][15][16][17][18][19]. This approach offers precise parameter aging estimation but demands a tailored design for the integrated measurement system within the power converter.…”

Section: State Of the Art Overviewmentioning

confidence: 99%

Real‐time monitoring and ageing detection algorithm design with application on SiC‐based automotive power drive system

Dini,

Basso,

Saponara

et al. 2024

IET Power Electronics

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The article describes an innovative methodology for the design and experimental validation of monitoring and anomaly detection algorithms, with a particular focus on the aging phenomenon, linked to the anomalous modification of the , in devices switching in power electronic systems integrated into modern high‐performance electrified vehicles. The case study concerns an electric drive for fully electrified vehicles, in which a three‐phase axial flux synchronous motor integrated into a wheel motor (Elaphe) is used and in which a high‐efficiency three‐phase inverter, designed with SiC technology (silicon carbide). The article proposes the design and validation of the innovative aging monitoring and detection system, in four consecutive phases. The first phase involves the creation of a real‐time model of electric drive, validated through experimental data extrapolated directly during a WLTP (Worldwide Harmonized Light Vehicle Test Procedure) test. The second phase consists of the creation of a virtual dataset representative of the aging phenomenon, via an anomaly injection procedure, emulating this phenomenon with a scaling factor (depending on the value of the ) on the current phase of the motor, relating to the inverter branch whose SiC device is affected. The third phase concerns the design of an estimator of the , based on an ANN (Artificial Neural Network) regression model, and involves a data manipulation phase with features extraction and reduction techniques. The fourth and final phase, involves the experimental validation of the method, through PIL (Processor‐In‐the‐Loop) tests, integrating the monitoring algorithm (consisting of a real‐time model and AI‐based regression model) on the NXPs32k144 embedded platform (based on Cortex‐M4), making the algorithm interact with the electric drive model on which anomaly injection is applied.

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Section: State Of the Art Overviewmentioning

confidence: 99%

Real‐time monitoring and ageing detection algorithm design with application on SiC‐based automotive power drive system

Dini,

Basso,

Saponara

et al. 2024

IET Power Electronics

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show abstract

“…Also, the turn-on time and gate leakage current rise [19], [20]. Moreover, in the case of SiC MOSFET, the voltage between the drain and source also changes [21], [22]. Therefore, the aging degree of the switching devices is estimated using these aging indicators: on-resistance, turn-on time, gate leakage current, drain and source voltage, etc.…”

Section: A Model Predictive Control In Abc Frame Figure 1 Three-phase...mentioning

confidence: 99%

Per-Phase Switching Frequency Control Method to Extend Lifespan of Three-Phase Voltage Source Inverters

Kim

Kwak

2022

IEEE Access

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This paper proposes a per-phase switching frequency control method to extend the lifespan of a three-phase voltage source inverter. The model predictive control that can intuitively deal with various control objectives is used in the proposed method. The cost function of the proposed technique consists of two terms. One is for current control, and another is for switching frequency control of each phase. Also, if necessary, a term for capacitor current RMS reduction can be added to the proposed cost function. The proposed technique reduces the switching loss of the most aged phase by reducing the number of switching operations. As a result, the reduced switching losses lower the junction temperature of the switching device. This extends the lifetime of the switching device. In addition, in the proposed technique, the capacitor current RMS, which can increase due to the per-phase switching frequency control, is effectively reduced by using the optional term for the capacitor current RMS reduction. The performances of the proposed method were verified through simulations and experiments.

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“…Poor oxide quality and integrity can result in current leakage, which has a detrimental impact on device performance. [4][5][6] Currently, thermal nitride SiO 2 , which boasts ultra-low leakage current, is widely utilized as the material for the gate oxide. [7][8][9] Nevertheless, its relatively low dielectric constant compared to the SiC substrate can result in electrical breakdown prior to the SiC breakdown field being reached, hindering its suitability for high-power applications.…”

Section: Introductionmentioning

confidence: 99%

Saturation thickness of stacked SiO₂ in atomic-layer-deposited Al₂O₃ gate on 4H-SiC

Shao

Wang

et al. 2023

Chinese Phys. B

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High-k materials as an alternative dielectric layer for SiC power devices have the potential to reduce interfacial state defects and improve MOS channel conduction capability. Besides, under identical conditions of gate oxide thickness and gate voltage, the high-k dielectric enables a greater charge accumulation in the channel region, resulting in a larger number of free electrons available for conduction. However, the lower energy band gap of high-k materials leads to significant leakage currents at the interface with SiC, which greatly affects device reliability. By inserting a layer of SiO2 between the high-k material and SiC, the interfacial barrier can be effectively widened and hence the leakage current will be reduced. In this study, the optimal thickness of the intercalated SiO2 was determined by investigating and analyzing the gate dielectric breakdown voltage and interfacial defects of a dielectric stack composed by atomic-layer-deposited Al2O3 layer and thermally nitride SiO2. Current-voltage and high-frequency capacitance-voltage measurements were performed on metal-oxide-semiconductor test structures with 35 nm thick Al2O3 stacked on 1-, 2-, 3-, 6-, or 9 nm thick nitride SiO2. Measurement results indicate that the current conducted through the oxides was affected by the thickness of the nitride oxide and the applied electric field. Finally, a saturation thickness of stacked SiO2 that contributed to dielectric breakdown and interfacial band offsets was identified. The findings in this paper provides guideline for the SiC gate dielectric stack design with the breakdown strength and the interfacial state defects considered.

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Gate Oxide Degradation Condition Monitoring Technique for High-Frequency Applications of Silicon Carbide Power MOSFETs

Cited by 10 publications

References 28 publications

Real‐time monitoring and ageing detection algorithm design with application on SiC‐based automotive power drive system

Real‐time monitoring and ageing detection algorithm design with application on SiC‐based automotive power drive system

Per-Phase Switching Frequency Control Method to Extend Lifespan of Three-Phase Voltage Source Inverters

Saturation thickness of stacked SiO₂ in atomic-layer-deposited Al₂O₃ gate on 4H-SiC

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Gate Oxide Degradation Condition Monitoring Technique for High-Frequency Applications of Silicon Carbide Power MOSFETs

Cited by 10 publications

References 28 publications

Real‐time monitoring and ageing detection algorithm design with application on SiC‐based automotive power drive system

Real‐time monitoring and ageing detection algorithm design with application on SiC‐based automotive power drive system

Per-Phase Switching Frequency Control Method to Extend Lifespan of Three-Phase Voltage Source Inverters

Saturation thickness of stacked SiO2 in atomic-layer-deposited Al2O3 gate on 4H-SiC

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Saturation thickness of stacked SiO₂ in atomic-layer-deposited Al₂O₃ gate on 4H-SiC