Gate-Length and Drain-Bias Dependence of Band-to-Band Tunneling-Induced Drain Leakage in Irradiated Fully Depleted SOI Devices

Mamouni, F. El; Dixit, S.K.; Schrimpf, R.D.; Adell, P.C.; Esqueda, Ivan Sanchez; McLain, Michael Lee; Barnaby, Hugh; Cristoloveanu, S.; Xiong, Wenjing

doi:10.1109/tns.2008.2006500

Cited by 42 publications

(18 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The drain voltage was 1 V, and the back gate (substrate) and source were grounded. The front-gate threshold voltage shifts with total dose, which is caused by coupling to radiation-induced charge in the BOX [2]- [4], [14]- [19]. The threshold voltage shift for devices with a fin width of 80 nm (Fig.…”

Section: B Fin Width Dependence In Irradiated Finfetsmentioning

confidence: 99%

“…However, the BOX makes SOI devices, including ultra-deep submicron processes ( nm) [2], more sensitive than bulk transistors to total ionizing dose (TID) damage. This is because TID causes positive charge to be trapped in the buried oxide [2]- [4]. In attempts to increase the current drive, enhance the control of short-channel effects, and improve the TID response of SOI devices, three-dimensional SOI MOSFETs with multigate structures are under consideration [5], [6].…”

Section: Introductionmentioning

confidence: 99%

“…2 illustrates an SEM picture of a FinFET with a single fin on the left, and an illustrative schematic diagram of the cross section of the FinFET is displayed on the right. Recent work reported that very wide FinFETs behave like planar SOI transistors, where the coupling effects of the front and the back channel are dominant in the total dose response [4]. The TID response of these devices depends on the device geometry, as well as the process details [4].…”

Section: Introductionmentioning

confidence: 99%

“…Recent work reported that very wide FinFETs behave like planar SOI transistors, where the coupling effects of the front and the back channel are dominant in the total dose response [4]. The TID response of these devices depends on the device geometry, as well as the process details [4]. In other work, narrow FinFETs with very long channels (10 m) exhibit higher tolerance to TID than wider devices [7].…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Fin-Width Dependence of Ionizing Radiation-Induced Subthreshold-Swing Degradation in 100-nm-Gate-Length FinFETs

Mamouni

Zhang

Schrimpf

et al. 2009

IEEE Trans. Nucl. Sci.

Self Cite

View full text Add to dashboard Cite

The dependence of the subthreshold-swing (SS) degradation on fin width is reported for irradiated 100-nm-gatelength, fully depleted -channel FinFETs. The wider the fin is, the greater the radiation-induced SS degradation. The higher tolerance to radiation-induced charge for the narrower FinFETs is attributed to the additional lateral gate control over the body potential. The irradiation and room temperature annealing results suggest that the SS increase for wider FinFETs is due primarily to nonuniform trapped charge in the buried oxide (BOX). The subthreshold characteristics of FinFETs with two fins are more likely to exhibit a nonuniform subthreshold slope (NUSS), resulting from fin-to-fin variability, than FinFETs with 20 fins, where the corresponding -gs curve is the composite of the 20 individual -gs curves.Index Terms-Annealing, buried oxide (BOX), fin width, fully depleted (FD) FinFETs, silicon-on-insulator (SOI), subthreshold swing (SS), total ionizing dose (TID).

show abstract

Section: B Fin Width Dependence In Irradiated Finfetsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Fin-Width Dependence of Ionizing Radiation-Induced Subthreshold-Swing Degradation in 100-nm-Gate-Length FinFETs

Mamouni

Zhang

Schrimpf

et al. 2009

IEEE Trans. Nucl. Sci.

Self Cite

View full text Add to dashboard Cite

show abstract

“…6 shows the threshold voltage shift for devices with under different measurement bias conditions. The threshold voltage shifts from [12] are approximately 600 mV. Devices in [12] were fabricated in a similar technology with a 2 nm gate oxide, 150 nm buried oxide and 58 nm silicon body.…”

Section: Bias Dependence Of Threshold Voltage Shiftsmentioning

confidence: 99%

Impact of Back-Gate Bias and Device Geometry on the Total Ionizing Dose Response of 1-Transistor Floating Body RAMs

Mahatme

Zhang

Reed

et al. 2012

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

In this paper we investigate how geometry impacts the memory characteristics of 1-transistor dynamic floating body RAMs (FBRAMs) under total ionizing dose exposure. FBRAMs are implemented using fully depleted silicon-on-insulator devices with ultrathin buried oxide and body. Analytical models and experimental data are used to quantify the effects of charge trapping in the oxides and spacers on the memory read window shifts. The effects of increased radiation-induced leakage and interface trapping on the retention time are also discussed. Small geometry devices show reduced memory window shifts compared to large devices, but the retention time degradation is higher. The effects of coupling between interfaces and back-gate bias are also discussed in the context of memory characteristics.Index Terms-FDSOI devices, floating body RAMs, total ionizing dose (TID) exposure, ultrathin buried oxide (UTBOX), 1-transistor DRAMs.

show abstract

Design optimization of tunneling field-effect transistor based on silicon nanowire PNPN structure and its radio frequency characteristics

Cho

Kang

2012

Current Applied Physics

View full text Add to dashboard Cite

Gate-Length and Drain-Bias Dependence of Band-to-Band Tunneling-Induced Drain Leakage in Irradiated Fully Depleted SOI Devices

Cited by 42 publications

References 13 publications

Fin-Width Dependence of Ionizing Radiation-Induced Subthreshold-Swing Degradation in 100-nm-Gate-Length FinFETs

Fin-Width Dependence of Ionizing Radiation-Induced Subthreshold-Swing Degradation in 100-nm-Gate-Length FinFETs

Impact of Back-Gate Bias and Device Geometry on the Total Ionizing Dose Response of 1-Transistor Floating Body RAMs

Design optimization of tunneling field-effect transistor based on silicon nanowire PNPN structure and its radio frequency characteristics

Contact Info

Product

Resources

About