J. Electron. Mater.
 2024
DOI: 10.1007/s11664-024-11156-z
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Gate Leakage Suppression and Threshold Voltage Stability Improvement in GaN-Based Enhancement-Mode HEMTs on Ultrathin-Barrier AlGaN/GaN Heterostructures with a p-Doping-Free GaN Cap

Yuhao Wang,
Sen Huang,
Qimeng Jiang
et al.
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