Gate Engineering to prevent NMOS Dopant Channeling for Nano-Scale CMOSFET Technology

Park, S.H.; Lee, H.D.; Kim, J.S.; Baek, Suk Hwan; Chang, Hsu-Hwa; Lee, J.H.; Kim, K.C.; Song, Bin; Bae, Hyejeong; Kim, M.O.; Lee, H.S.; Kang, Yong; Kim, D.B.

doi:10.7567/ssdm.2003.a-2-6

Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials 2003

DOI: 10.7567/ssdm.2003.a-2-6

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Gate Engineering to prevent NMOS Dopant Channeling for Nano-Scale CMOSFET Technology

S.H. Park¹,

H.D. Lee²,

J.S. Kim³

et al.

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Gate Engineering to prevent NMOS Dopant Channeling for Nano-Scale CMOSFET Technology

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