2022
DOI: 10.1109/jestpe.2021.3108442
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Gate-Driver Integrated Junction Temperature Estimation of SiC MOSFET Modules

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Cited by 17 publications
(3 citation statements)
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“…However, it is worth noting that these systems tend to be cost-intensive due to their requirement for transducing rapidly changing physical quantities. This is especially true for SiC MOSFET, which can exhibit dynamics reaching even MHz levels in resonant converters [9][10][11][12][13][14][15][16][17][18][19]. This approach offers precise parameter aging estimation but demands a tailored design for the integrated measurement system within the power converter.…”
Section: State Of the Art Overviewmentioning
confidence: 99%
See 1 more Smart Citation
“…However, it is worth noting that these systems tend to be cost-intensive due to their requirement for transducing rapidly changing physical quantities. This is especially true for SiC MOSFET, which can exhibit dynamics reaching even MHz levels in resonant converters [9][10][11][12][13][14][15][16][17][18][19]. This approach offers precise parameter aging estimation but demands a tailored design for the integrated measurement system within the power converter.…”
Section: State Of the Art Overviewmentioning
confidence: 99%
“…The process of updating weights, in Equation ( 16), during gradient descent (16) shows how the new weight w with an absolute value less than 1, but it does not provide a direct criterion for lambda selection. A common approach involves randomly sub-sampling the training dataset, observing estimate changes for different lambda values.…”
Section: Fann Design: Training and Validationmentioning
confidence: 99%
“…‚ Improving the reliability of operation close to thermal restrictions ‚ Achieving a more reasonable difference between the maximum junction temperature throughout the operation and the nominal junction temperature ‚ Enhancing the operation performance during transient at thermal restrictions Decrease in thermal cycle Manipulation in terms of the following: -Switching power loss: • Gate resistance ( [210], [223], [224]), • Frequency ( [27], [28], [45], [46], [216], [210], [225], [226], [227], [228], [229]), • Gate drivers ( [32], [230], [222], [231], [232], [233], [234], [235]), • Shoot-through duty ratio ( [233]).…”
Section: E Cost Analysismentioning
confidence: 99%