Gate-drain avalanche breakdown in GaAs power MESFET's

Surface potential effect on gate—Drain avalanche breakdown in GaAs MESFET's

“…electric field and suppress the avalanche multiplication of carriers in order to obtain high drain breakdown voltage. A two-dimensional device simulator where rl, is the electrostatic potential, n is the electron is the most powerful tool to investigate the electric field density, p is the hole density, 4,, is the quasi-Fermi podistribution in GaAs MESFET's, and Some results have tential for holes, E is the dielectric constant, 4 is a unit been reported [l], [2]. According to them, a maximum charge, and J, is the electron current density.…”

Physical Limitations of Semiconductor Devices

“…The gate recess structures provide a more uniform electric field distribution in comparison with the planar structures [132].…”

“…Surface states and passivation play an important role in the gate-drain breakdown [132][133][134]. The states increase the recombination rate and this results in depletion layer formation.…”

“…5.4a). The domain structure is determined by average [132] the breakdown voltage corresponds to planar structure. narrowest region in the channel.…”

Distribution of the intensity of surface optical waves in the focal region of a geodesic lens made of LiNbO3:Ti

“…They demonstrated that a fraction of holes that were generated near the drain is accumulated in the SI buffer near the n + source contact, and that device burnout can occur in sub-nanosecond times. David et al [8] estimated the time until breakdown as a function of gate-drain voltage in excess of BV GD in GaAs MESFETs. They calculated typical times in the 20-240 ps range.…”