Gate Dielectrics for Organic Field‐Effect Transistors: New Opportunities for Organic Electronics

Facchetti, Antonio; Yoon, Myung Han; Marks, Tobin J.

doi:10.1002/adma.200500517

Cited by 992 publications

(767 citation statements)

References 135 publications

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“…When considering the OFET, substrate, electrode and dielectric choice also play a significant role in the overall device performance [11][12][13]. Currently, investigations into OFETs is commonly performed using bottom-gate, bottom contact or bottom gate, top contact structures on highly doped Si substrates with an SiO 2 layer to form the gate and gate dielectric respectively [6,14,15].…”

Section: Introductionmentioning

confidence: 99%

“…Evidence shows that the surface morphology, surface chemistry and dielectric constant of the dielectric layer can influence the overall behaviour of the channel [13,16]. As well as this, a material's electrical characteristics are also an important consideration when determining its suitability as a gate dielectric [13].…”

Section: Introductionmentioning

confidence: 99%

“…As well as this, a material's electrical characteristics are also an important consideration when determining its suitability as a gate dielectric [13]. Radio Frequency (RF) plasma polymerisation provides thin films which are smooth, pinhole free and void of surface defects [17].…”

Section: Introductionmentioning

confidence: 99%

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Electrical characterisations of plasma polyermised linalyl acetate

Anderson

Jacob

2012

Materials Science and Engineering: B

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Thin films of plasma polymerised linalyl acetate (PLA) were fabricated and their electrical properties investigated. The high frequency dielectric constant was determined using the split post dielectric resonator (SPDR) technique at frequencies of 10 GHz and 20 GHz and compared with the low frequency dielectric constant found from capacitive measurements of metal-insulator-metal (MIM) structures. Dielectric constants of 2.39 and 2.43 resulted from each of the respective techniques, in good agreement with each other. The J-V characteristics of MIM structures fabricated at various RF power levels were then investigated in order to determine the resistivity and DC conduction mechanism of the PLA thin films. From these data, the predominate mechanism of charge transport in the high voltage region was found to be consistent with Richardson-Schottky conduction, and the resistivity of the thin films found to increase with increasing RF power.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Electrical characterisations of plasma polyermised linalyl acetate

Anderson

Jacob

2012

Materials Science and Engineering: B

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“…semiconductors showing large p-and n-type mobilities 1-4 , dielectrics and circuit methodologies providing low power consumption [5][6][7][8] and smart production methods suitable for flexible substrates [9][10][11][12] have been developed. Much attention has focussed on realizing electrically and environmentally stable OTFTs required to successfully implement complex systems such as radio frequency identification (RFID) tags 10,[13][14][15][16] .…”

mentioning

confidence: 99%

Concept of a Molecular Charge Storage Dielectric Layer for Organic Thin‐Film Memory Transistors

Burkhardt¹,

Jedaa²,

Novák³

et al. 2010

Advanced Materials

115

121

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Citation for published item:furkh rdtD wF nd ted D eF nd xov kD wF nd i elD eF nd o¤ %t hovskyD uF nd tell iD pF nd rirs h D eF nd r likD wF @PHIHA 9gon ept of mole ul r h rge stor ge diele tri l yer for org ni thinE(lm memory tr nsistorsF9D edv n ed m teri lsFD PP @PQAF ppF PSPSEPSPVF Further information on publisher's website:httpXGGdxFdoiForgGIHFIHHPG dm FPHIHHHHQH Publisher's copyright statement: his is the epted version of the following rti leX furkh rdtD wF nd ted D eF nd xov kD wF nd i elD eF nd o¤ %t hovskyD uF nd tell iD pF nd rirs h D eF nd r likD wF @PHIHA 9gon ept of mole ul r h rge stor ge diele tri l yer for org ni thinE(lm memory tr nsistorsF9D edv n ed m teri lsFD PP @PQAF ppF PSPSEPSPVD whi h h s een pu lished in (n l form t httpXGGdxFdoiForgGIHFIHHPG dm FPHIHHHHQHF his rti le m y e used for nonE ommer i l purposes in ord n e ith ileyE gr erms nd gonditions for selfE r hivingFAdditional information:Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-pro t purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. In this work we report on a novel concept of an electrically programmable selfassembled molecular gate dielectric layer for OTFTs (see figure 1a) that can be reversibly charged and discharged and retains these digital states even when the supply voltage is removed. Due to the small thickness of the dielectric stack (app. 5.7 nm), the memory transistors operate with very small program and erase voltages of ± 2 V. Despite the extremely small dielectric thickness, the retention time is already promising (~6 hours with a read voltage of -750 mV applied continuously). The dielectric is a mixed monolayer of aliphatic and C 60 -functionalized phosphonic acid molecules (app. 2.1 nm thickness) on a patterned and plasma-oxidized aluminum gate electrode on a glass substrate. The aluminum oxide (AlO x ) contributes with a thickness of 3.6 nm to the dielectric layer stack 6 . As the aliphatic component, n-octadecylphosphonic acid 1 was chosen, which has already shown excellent insulating characteristics as the gate dielectric 6 . As the charge storage component, the C 60 -derivative 2 was synthesized to take advantage of the strong acceptor properties and reversible redox behavior of C 60 (Figure 1b and Supplementary Information SI-1) and of the self-assembly properties induced by the C 18 -aliphatic tail with phosphonic acid anchor group.Mixed self-assembled monolayers of 1 and 2 were created by a simple "one pot" solution content) have a relatively small memory ratio of 2.5 (see Section I in Figure 3b), the devices

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“…[1][2][3][4] The surface characteristics of the gate dielectric strongly influence the quality of the gate dielectric-semiconductor interface hence the device performance. [5][6][7] In the last decade, considerable effort has been devoted to the fabrication of OTFTs using organic gate dielectrics [8][9][10][11][12] for use as switching devices for flexible displays. Although great advances have been made in the improvement of OTFTs using polymer gate dielectrics, there has been relatively little research into the effects of the surface energy of polymer gate dielectrics on device performance.…”

Section: Introductionmentioning

confidence: 99%

Effect of curing conditions of a poly(4-vinylphenol)gate dielectric on the performance of a pentacene-based thin film transistor

et al. 2009

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Abstract:We improved the performance of pentacene-based thin film transistors by changing the curing environment of poly(4-vinylphenol) (PVP) gate dielectrics, while keeping the dielectric constant the same. The field-effect mobility of the pentacene TFTs constructed using the vacuum cured PVP was higher than that of the device based on the Ar flow cured gate dielectric, possibly due to the higher crystalline perfection of the pentacene films. The present results demonstrated that the curing conditions used can markedly affect the surface energy of polymer gate dielectrics, thereby affecting the field-effect mobility of TFTs based on those dielectrics.

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Gate Dielectrics for Organic Field‐Effect Transistors: New Opportunities for Organic Electronics

Cited by 992 publications

References 135 publications

Electrical characterisations of plasma polyermised linalyl acetate

Electrical characterisations of plasma polyermised linalyl acetate

Concept of a Molecular Charge Storage Dielectric Layer for Organic Thin‐Film Memory Transistors

Effect of curing conditions of a poly(4-vinylphenol)gate dielectric on the performance of a pentacene-based thin film transistor

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