Gate dielectric material influence on DC behavior of MO(I)SHEMT devices operating up to 150 °C

Agopian, Paula Ghedini Der; Carmo, Genilson Julião do; Martino, João Antônio; Simoen, Eddy; Peralagu, Uthayasankaran; Parvais, B.; Waldron, Niamh; Collaert, N.

doi:10.1016/j.sse.2021.108091

Cited by 6 publications

(2 citation statements)

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“…While MIS-HEMT device presents 17 µA, 77 µA, and 194 µA, for increasing VGT from 0V to 400mV, for MOSFETs the current level for the same bias condition reaches only 0.55 µA, 2.4 µA and 7 µA, respectively. Previous works (5)(6)(7)(8) showed that the MIS-HEMT have multiple conduction mechanisms (MOS and HEMT conductions) and that these conductions are very dependent on VGT. Figure 3 shows output characteristics for several VGT voltages.…”

Section: Resultsmentioning

confidence: 99%

(Digital Presentation) Analysis of MIS-HEMT Kink Effect in Saturation Region

Perina¹,

Martino²,

Agopian³

2023

ECS Trans.

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In this work, the Metal-Insulator-Semiconductor High Electron Mobility Transistor (MIS-HEMT) behavior in saturation region was analyzed and compared with a GaN MOSFET. The MIS-HEMT presents a current level about 30 times higher than GaN MOSFET, for the same bias conditions. The different saturation points (VDS sat) of the MOS and HEMT conductions is responsible for the appearance of a kink in the drain current (IDS) current as a function of drain voltage (VDS) curve. The output conductance (gD) of the MOSFET presented a strong dependence on VGT, while the MIS-HEMT only a slightly dependence was observed. The MIS-HEMT kink effect (MH kink) was defined by the drain voltage where the bump occurs. The MH kink only occurs for a high enough gate bias to enable the MOS conduction, and MH kink value increases with the gate voltage overdrive (VGT) and its variation tends to saturate for VGT higher than 3,5V.

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Section: Resultsmentioning

confidence: 99%

(Digital Presentation) Analysis of MIS-HEMT Kink Effect in Saturation Region

Perina¹,

Martino²,

Agopian³

2023

ECS Trans.

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“…As a solution to these issues, the metal-insulatorsemiconductor high electron mobility transistor (MISHEMT) is presented as an alternative [9][10][11]. With the gate insulator, the gate leakage reduces drastically and mitigates the current collapse [10,12,13]. The MISHEMT is a promising alternative for applications at high frequency, including 5G applications [14][15][16], power electronics [11,17], showing high power gain at 10 GHz [18], with the possibility of achieving higher RF performance of the device by adjusting the Al concentration in the AlGaN barrier [19].…”

Section: Introductionmentioning

confidence: 99%

MISHEMT intrinsic voltage gain under multiple channel output characteristics

Canales,

Perina,

Martino

et al. 2023

Semicond. Sci. Technol.

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In this paper the MISHEMT device (Metal/Si3N4/AlGaN/AlN/GaN - Metal-Insulator-Semiconductor High Electron Mobility Transistor) is studied focusing mainly on the impact of the multiple conductions on the intrinsic voltage gain (Av). It is shown that the total drain current is composed of 3 different drain current components, whereof one is related to theMIS channel and the other two are related to HEMT channels. The device output characteristics present double drain voltage saturation that gives rise to a double plateau in the saturation region of the output characteristics. This behavior relies also on the gate voltage, so the output characteristics and analog parameters extraction are bias dependent. The intrinsic voltage gain increases thanks to the Early voltage increment in the second plateau whereHEMT conduction is dominant. Electron concentration profiles were simulated in order to investigate the device saturation regime.investigate the device saturation regime.

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