Gate defined quantum dot realized in a single crystalline InSb nanosheet

Xue, Jianhong; Chen, Yuanjie; Pan, Dong; Wang, Ji‐Yin; Zhao, Jianhua; Huang, Shaoyun; Xu, Hongqi

doi:10.1063/1.5064368

Cited by 14 publications

(15 citation statements)

References 32 publications

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“…The fabricated devices are measured in a showing that the QDs can now be much better defined in the InSb nanosheet than that in Ref. 19. The measured charge stability diagrams of the DQD demonstrate that the charge states and the inter-dot coupling of the DQD can be efficiently regulated by the top gates.…”

Section: Introductionmentioning

confidence: 84%

“…2(a)] and check the operating characteristics of other top gates. fluctuations are inherent to a mesoscopic system in which the electron coherence length is on the order of the size of the conduction channel and the electron mean free path is much shorter than the conduction channel size [19] .…”

Section: Top-gate Characterizationsmentioning

confidence: 99%

“…Electrical measurements have shown that these freestanding nanosheets exhibit good transport properties and tunable, strong SOC, and are able to be contacted directly via metal deposition. In a recent report, experimental attempts to define a single QD in an MBE-grown freestanding InSb nanosheet have been made via top gate technique [19] .…”

Section: Introductionmentioning

confidence: 99%

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A double quantum dot defined by top gates in a single crystalline InSb nanosheet*

Chen

Huang

et al. 2021

Chinese Phys. B

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We report on the transport study of a double quantum dot (DQD) device made from a freestanding, single crystalline InSb nanosheet. The freestanding nanosheet is grown by molecular beam epitaxy and the DQD is defined by the top gate technique. Through the transport measurements, we demonstrate how a single quantum dot (QD) and a DQD can be defined in an InSb nanosheet by tuning voltages applied to the top gates. We also measure the charge stability diagrams of the DQD and show that the charge states and the inter-dot coupling between the two individual QDs in the DQD can be efficiently regulated by the top gates. Numerical simulations for the potential profile and charge density distribution in the DQD have been performed and the results support the experimental findings and provide a better understanding of fabrication and transport characteristics of the DQD in the InSb nanosheet. The achieved DQD in the two-dimensional InSb nanosheet possesses pronounced benefits in lateral scaling and can thus serve as a new building block for the developments of quantum computation and quantum simulation technologies.

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Section: Introductionmentioning

confidence: 84%

Section: Top-gate Characterizationsmentioning

confidence: 99%

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A double quantum dot defined by top gates in a single crystalline InSb nanosheet*

Chen

Huang

et al. 2021

Chinese Phys. B

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“…In comparison with InSb/InAlSb quantum well systems, the free-standing InSb nanosheets have advantages in direct contact by metals, including superconducting materials, in easy transfer to different substrates, and in convenient fabrication of dual-gate structures. With use of free-standing InSb nanosheets, lateral quantum devices, such as planar quantum dots 31 and superconducting Josephson junctions [32][33][34] , have been successfully fabricated. A most intriguing perspective of these layered materials is to build topological superconducting structures from them, in which Majorana fermions and parafermions 35,36 can be created and manipulated, enabling a different route of developments towards topological quantum computation technology.…”

Section: Introductionmentioning

confidence: 99%

Strong and tunable spin–orbit interaction in a single crystalline InSb nanosheet

et al. 2021

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A dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin–orbit interaction in a narrow bandgap semiconductor InSb nanosheet. We demonstrate that by applying a voltage over the dual gate, efficiently tuning of the spin–orbit interaction in the InSb nanosheet can be achieved. We also find the presence of an intrinsic spin–orbit interaction in the InSb nanosheet at zero dual-gate voltage and identify its physical origin as a build-in asymmetry in the device layer structure. Having a strong and controllable spin–orbit interaction in an InSb nanosheet could simplify the design and realization of spintronic deceives, spin-based quantum devices, and topological quantum devices.

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“…28 Quantum transport and quantum-dot geometries in such nanostructures were also demonstrated very recently. 7,[31][32][33] S. Gazibegovich et al combined selective-area growth with the vapour-liquid-solid mechanism in metal organic vapour phase epitaxy, leading to the formation of InSb NFs thanks to the development of a twin-plane boundary. 19,34 The same group reported evidence for crossed Andreev reflections in JJ made from such flakes.…”

mentioning

confidence: 99%

Gate-controlled Supercurrent in Ballistic InSb Nanoflag Josephson Junctions

Salimian,

Carrega,

Verma

et al. 2021

Preprint

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High-quality III-V narrow band gap semiconductor materials with strong spin-orbit coupling and large Landé g-factor provide a promising platform for next-generation applications in the field of high-speed electronics, spintronics, and quantum computing. Indium Antimonide (InSb) offers a narrow band gap, high carrier mobility, and a small effective mass, and thus is very appealing in this context. In fact, this material has attracted tremendous attention in recent years for the implementation of topological superconducting states supporting Majorana zero modes. However, highquality heteroepitaxial two-dimensional (2D) InSb layers are very difficult to realize owing to the large lattice mismatch with all commonly available semiconductor substrates. An alternative pathway is the growth of free-standing single-crystalline 2D InSb nanostructures, the so-called nanoflags. Here we demonstrate fabrication of ballistic Josephson-junction devices based on InSb nanoflags with Ti/Nb contacts that show gate-tunable proximity-induced supercurrent up to 50 nA at 250 mK and a sizable excess current. The devices show clear signatures of subharmonic gap structures, indicating phase-coherent transport in the junction and a high transparency of the interfaces. This places InSb nanoflags in the spotlight as a versatile and convenient 2D platform for advanced quantum technologies.

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Gate defined quantum dot realized in a single crystalline InSb nanosheet

Cited by 14 publications

References 32 publications

A double quantum dot defined by top gates in a single crystalline InSb nanosheet*

A double quantum dot defined by top gates in a single crystalline InSb nanosheet*

Strong and tunable spin–orbit interaction in a single crystalline InSb nanosheet

Gate-controlled Supercurrent in Ballistic InSb Nanoflag Josephson Junctions

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