Gate control of spin transport in multilayer graphene

Goto, Hidenori; Kanda, Akinobu; Sato, Tomohiro; Tanaka, Shunsuke; Ootuka, Youiti; Odaka, S.; Miyazaki, Hisao; Tsukagoshi, Kazuhito; Aoyagi, Yoshinobu

doi:10.1063/1.2937836

Cited by 74 publications

(57 citation statements)

References 23 publications

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“…1 for a review, and more recently for single or multilayer graphene. [2][3][4][5][6][7][8][9][10][11][12][13][14] The low dimensionality, the ability to control the charge-carrier type, and the density combined with the highest roomtemperature carrier mobility reported so far for any material [15][16][17] make graphene a promising candidate for electronic applications. Especially relevant for spintronics are the high carrier mobilities and the possibly long spin-relaxation times which determine large spin-relaxation lengths, i.e., long distances over which the spin information can be transported and manipulated.…”

Section: Introductionmentioning

confidence: 99%

Electronic spin transport in graphene field-effect transistors

et al. 2009

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Electronic spin transport in graphene field-effect transistors Popinciuc, M.; Jozsa, C.; Zomer, P. J.; Tombros, N.; Veligura, A.; Jonkman, H. T.; van Wees, B. J. Take-down policy If you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim.Downloaded from the University of Groningen/UMCG research database (Pure): http://www.rug.nl/research/portal. For technical reasons the number of authors shown on this cover page is limited to 10 maximum. Spin transport experiments in graphene, a single layer of carbon atoms ordered in a honeycomb lattice, indicate spin-relaxation times that are significantly shorter than the theoretical predictions. We investigate experimentally whether these short spin-relaxation times are due to extrinsic factors, such as spin relaxation caused by low impedance contacts, enhanced spin-flip processes at the device edges, or the presence of an aluminum oxide layer on top of graphene in some samples. Lateral spin valve devices using a field-effect transistor geometry allowed for the investigation of the spin relaxation as a function of the charge density, going continuously from metallic hole to electron conduction ͑charge densities of n ϳ 10 12 cm −2 ͒ via the Dirac charge neutrality point ͑n ϳ 0͒. The results are quantitatively described by a one-dimensional spin-diffusion model where the spin relaxation via the contacts is taken into account. Spin valve experiments for various injector-detector separations and spin precession experiments reveal that the longitudinal ͑T 1 ͒ and the transversal ͑T 2 ͒ relaxation times are similar. The anisotropy of the spin-relaxation times ʈ and Ќ , when the spins are injected parallel or perpendicular to the graphene plane, indicates that the effective spin-orbit fields do not lie exclusively in the two-dimensional graphene plane. Furthermore, the proportionality between the spinrelaxation time and the momentum-relaxation time indicates that the spin-relaxation mechanism is of the Elliott-Yafet type. For carrier mobilities of 2 ϫ 10 3 -5ϫ 10 3 cm 2 / V s and for graphene flakes of 0.1-2 m in width, we found spin-relaxation times on the order of 50-200 ps, times which appear not to be determined by the extrinsic factors mentioned above.

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Section: Introductionmentioning

confidence: 99%

Electronic spin transport in graphene field-effect transistors

et al. 2009

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“…The electrons in graphene are not much affected by electron -electron interaction and have a long mean free path [6]. In addition, spin-orbit coupling and hyperfine interactions with carbon nuclei are both small in graphene, and a very long spin relaxation length has been demonstrated [7]. All these superior transport properties encourage us to downscale graphene devices further to the regime where we can fully exploit the coherent natures of electronic and spin states.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and ab initio study of downscaled graphene nanoelectronic devices

et al. 2012

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In this paper we first present a new fabrication process of downscaled graphene nanodevices based on direct milling of graphene using an atomic-size helium ion beam. We address the issue of contamination caused by the electron-beam lithography process to pattern the contact metals prior to the ultrafine milling process in the helium ion microscope (HIM). We then present our recent experimental study of the effects of the helium ion exposure on the carrier transport properties. By varying the time of helium ion bombardment onto a bilayer graphene nanoribbon transistor, the change in the transfer characteristics is investigated along with underlying carrier scattering mechanisms. Finally we study the effects of various single defects introduced into extremely-scaled armchair graphene nanoribbons on the carrier transport properties using ab initio simulation.

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“…These experiments include the first unambiguous demonstration of spin injection/detection at room temperature in thin-films devices by Jedema et al 39,40 , the determination of the spin diffusion in a variety of materials, the demonstration of electrical detection of spin precession (Jedema et al 41 ), the study of the spin polarization of tunneling electrons as a function of the bias voltage (Valenzuela et al 42 ), and the implementation of the magnetization reversal of a nanoscale FM particle with pure spin currents (Kimura et al 43 , Yang et al 44 ). Nonlocal detection of spin accumulation has been implemented in systems comprising effective one and zero dimensional 61,62 metallic structures, semiconductors [63][64][65] , superconductors 49,56,60 , nanotubes 66 and graphene [67][68][69][70][71][72] , using both transparent and tunneling interfaces. , as discussed in Section 3.…”

Section: Historic Backgroundmentioning

confidence: 99%

Nonlocal Electronic Spin Detection, Spin Accumulation and the Spin Hall Effect

Valenzuela

2009

Int. J. Mod. Phys. B

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In recent years, electrical spin injection and detection has grown into a lively area of research in the field of spintronics. Spin injection into a paramagnetic material is usually achieved by means of a ferromagnetic source, whereas the induced spin accumulation or associated spin currents are detected by means of a second ferromagnet or the reciprocal spin Hall effect, respectively. This article reviews the current status of this subject, describing both recent progress and well-established results. The emphasis is on experimental techniques and accomplishments that brought about important advances in spin phenomena and possible technological applications. These advances include, amongst others, the characterization of spin diffusion and precession in a variety of materials, such as metals, semiconductors and graphene, the determination of the spin polarization of tunneling electrons as a function of the bias voltage, and the implementation of magnetization reversal in nanoscale ferromagnetic particles with pure spin currents.

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Gate control of spin transport in multilayer graphene

Cited by 74 publications

References 23 publications

Electronic spin transport in graphene field-effect transistors

Electronic spin transport in graphene field-effect transistors

Fabrication and ab initio study of downscaled graphene nanoelectronic devices

Nonlocal Electronic Spin Detection, Spin Accumulation and the Spin Hall Effect

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