Gate capacitance effect on P-type tunnel thin-film transistor with TiN/HfZrO2 gate stack

Cheng-Yu, William; Li, Ming-Jhe; Luo, Shen-Ming; Lin, Jiun-Hung; Tsai, Chin-Hsien

doi:10.1016/j.tsf.2020.137818

Thin Solid Films

2020

DOI: 10.1016/j.tsf.2020.137818

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Gate capacitance effect on P-type tunnel thin-film transistor with TiN/HfZrO2 gate stack

William Cheng-Yu

Ming-Jhe Li

Shen-Ming Luo

et al.

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2023

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Cited by 2 publications

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References 27 publications

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“…9,10 Tunnel TFTs have been proposed to overcome this short channel issue due to its excellent immunity to short channel effects. [11][12][13][14][15] It can be attributed its special carrier transport mechanism: interband tunneling. This makes the electrical characteristics of poly-Si tunnel TFT almost invariant when the channel length is reduced to 100 nm.…”

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confidence: 99%

Ferroelectric Tunnel Thin-Film Transistor for Synaptic Applications

Cheng-Yu¹,

Su²,

Kao³

et al. 2023

ECS J. Solid State Sci. Technol.

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A ferroelectric tunnel thin-film transistor (FeT-TFT) with polycrystalline-silicon (poly-Si) channel and ferroelectric HfZrOx gate dielectric is demonstrated with analog memory characteristics for the application of synaptic devices. The FeT-TFT exhibits a much lower conduction current of ~0.032 times in transfer characteristics and maximum conductance (Gd) of ~0.14 to 0.2 times in potentiation and depression operation than the FeTFT due to FeT-TFT’s carrier transport mechanism: interband tunneling. This work employed pulse widths of 75, 150, and 300 ns to modulate Gd, and it was found that using a pulse width of 75 ns could achieve low asymmetry ~1 and high Gd ratio ~20.63 under consideration of operation speed. When the pulse time is increased, the potentiation and depression voltages can be significantly decreased to maintain the low asymmetry, but the Gd ratio is also reduced. In addition, the endurance characteristic of poly-Si FeT-TFT is found to be strongly related to the degradation effect of subthreshold swing due to the dynamic stress effect in the endurance measurement. This result reveals that the reliability of ferroelectric devices is not only owing to the degradation of the remanent polarization.

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confidence: 99%

Ferroelectric Tunnel Thin-Film Transistor for Synaptic Applications

Cheng-Yu¹,

Su²,

Kao³

et al. 2023

ECS J. Solid State Sci. Technol.

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Transport mechanism in Hf0.5Zr0.5O2-based ferroelectric diodes

Yu,

Gong,

Yuan

et al. 2023

Sci. China Inf. Sci.

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Gate capacitance effect on P-type tunnel thin-film transistor with TiN/HfZrO2 gate stack

Cited by 2 publications

References 27 publications

Ferroelectric Tunnel Thin-Film Transistor for Synaptic Applications

Ferroelectric Tunnel Thin-Film Transistor for Synaptic Applications

Transport mechanism in Hf0.5Zr0.5O2-based ferroelectric diodes

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