GaSb thermophotovoltaic cells grown on GaAs by molecular beam epitaxy using interfacial misfit arrays

Juang, Bor‐Chau; Laghumavarapu, Ramesh B.; Foggo, Brandon J.; Simmonds, Paul J.; Lin, Andrew; Liang, Baolai; Huffaker, Diana L.

doi:10.1063/1.4915258

Cited by 43 publications

(37 citation statements)

References 25 publications

(29 reference statements)

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“…Gallium antimonide (GaSb) thin films are attractive platforms for energy conversion technologies. For example, crystalline films of GaSb function as the absorber layers and /or substrate in the most efficient thermophotovoltaics [1][2][3], as deposition substrates for lattice matched ternary (AlGaSb, InAsSb) and quaternary (AlGaAsSb, InGaAsSb) alloys [4,5], as infrared-capturing cells in tandem solar cells [6] and as the lasing medium in low voltage diode lasers [7]. Unfortunately, the current methods (e.g.…”

Section: Introductionmentioning

confidence: 99%

Electrochemical Liquid-Liquid-Solid Deposition of Crystalline Gallium Antimonide

DeMuth

Fahrenkrug

et al. 2016

Electrochimica Acta

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Direct electrodeposition of phase-pure crystalline gallium antimonide (GaSb) films has been achieved at low processing temperatures from an aqueous electrolyte. A liquid gallium electrode was used to drive the electroreduction of Sb 2 O 3 dissolved in 0.6 M NaOH. The quality and purity of the resultant films produced depended strongly on the chosen conditions, including temperature, time, and concentration of dissolved Sb 2 O 3. Under select conditions, the direct production of polycrystalline films of GaSb was possible. Raman spectroscopy, powder X-ray diffraction, selected area electron diffraction, scanning electron microscopy, and transmission electron microscopy were separately used to analyze the identity and crystallinity of the electrodeposited films. The cumulative data showed that this electrodeposition process followed the features common both to conventional electrodeposition and melt crystal growth. Accordingly, this electrodeposition process could not be categorized as electrodeposition followed by annealing. Rather, the data implicate this method is akin to a hybrid electrodeposition solution-based crystal growth, where crystalline GaSb films could be grown up to thicknesses of 1 µm in 60 min.

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Section: Introductionmentioning

confidence: 99%

Electrochemical Liquid-Liquid-Solid Deposition of Crystalline Gallium Antimonide

DeMuth

Fahrenkrug

et al. 2016

Electrochimica Acta

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“…[1][2][3][4][5][6] Although it could be expected to obtain only the 90 MDs due to their energetically favourable state with respect to the 60 ones, both types are usually observed in this system at similar growth conditions. [7][8][9] The 60 MDs generate threading dislocations (TDs), which emerging from the interface glide to the surface resulting in material degradation, decrementing its electrical and optical properties.…”

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confidence: 99%

Solid solution strengthening in GaSb/GaAs: A mode to reduce the TD density through Be-doping

Gutiérrez

Araújo

Jurczak

et al. 2017

Applied Physics Letters

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The need for a low bandgap semiconductor on a GaAs substrate for thermophotovoltaic applications has motivated research on GaSb alloys, in particular, the control of plastic relaxation of its active layer. Although interfacial misfit arrays offer a possibility of growing strain-free GaSb-based devices on GaAs substrates, a high density of threading dislocations is normally observed. Here, we present the effects of the combined influence of Be dopants and low growth temperature on the threading dislocation density observed by Transmission Electron Microscopy. The Be-related hardening mechanism, occurring at island coalescence, is shown to prevent dislocations to glide and hence reduce the threading dislocation density in these structures. The threading density in the doped GaSb layers reaches the values of seven times less than those observed in undoped samples, which confirms the proposed Be-related hardening mechanism.

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“…With a bandgap of 0.72 eV at room temperature, GaSb is a promising material for fabricating optoelectronic and electronic devices with a response spectrum in the near infrared wavelength, such as lasers [1,2], photodiode [3,4], thermophotovoltaic cells [5,6], and so on. The key structure of these devices is the p-n junction, which can be fabricated by diffusing Zn into an n-GaSb substrate.…”

Section: Introductionmentioning

confidence: 99%

Effects of the composition of diffusion source on the surface concentration and effective surface diffusivity of Zn in n-GaSb

2016

J Mater Sci

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Understanding the Zn diffusion behavior in GaSb is very important to accurately control the distribution of Zn during the fabrication of photoelectric devices. The surface concentration and effective surface diffusivity are two key parameters for modeling the Zn profile in GaSb. The experimental results indicated that when the diffusion temperature and time are kept unchanged, the diffusion profiles with pure Zn, Zn-Sb, and Zn-Ga sources differ in the surface concentration and effective surface diffusivity. To quantitatively explain the effects of source composition on the two parameters, the relationship between the two parameters and the vapor pressure surrounding the GaSb wafer in the diffusion process was deduced based on a surface-equilibrium assumption and the substitutional-interstitial mechanism. The Ga/Sb/Zn ternary phase diagram was calculated and discussed for determining the vapor pressures in different source cases. The ratio of surface concentrations and that of effective surface diffusivities between different sources were obtained to quantitatively explain the experiment results. The theoretical and experimental results both indicated that adding Sb to pure Zn source keeps the surface concentration unchanged while slightly decreases the effective surface diffusivity, and that adding Ga to pure Zn source significantly decreases both the surface concentration and effective surface diffusivity.

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GaSb thermophotovoltaic cells grown on GaAs by molecular beam epitaxy using interfacial misfit arrays

Cited by 43 publications

References 25 publications

Electrochemical Liquid-Liquid-Solid Deposition of Crystalline Gallium Antimonide

Electrochemical Liquid-Liquid-Solid Deposition of Crystalline Gallium Antimonide

Solid solution strengthening in GaSb/GaAs: A mode to reduce the TD density through Be-doping

Effects of the composition of diffusion source on the surface concentration and effective surface diffusivity of Zn in n-GaSb

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