GaSb: surface tension and floating-zone growth

Tegetmeier, A.; Cröll, A.; Danilewsky, A.N.; Benz, K.W.

doi:10.1016/0022-0248(96)00134-0

Cited by 22 publications

(13 citation statements)

References 8 publications

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“…The Ga-GaSb-Sb system on SiO 2 GaSb is an interesting candidate for detached growth, since the growth angle is rather large at 30.7° [5]. For stoichiometric material, some literature data exist [6] for the crucible materials, listed in table 1.…”

Section: Resultsmentioning

confidence: 98%

“…from a Ga solution zone. The surface tension of GaSb has been shown to depend strongly on the composition in a nonlinear fashion [5,7]. An interesting question is therefore whether the contact angle is also a function of the composition.…”

Section: Resultsmentioning

confidence: 99%

“…The sample ampoule was placed in a furnace for sessile drop measurements. Detailed information on the measurement setup is given in [5,7].…”

Section: Resultsmentioning

confidence: 99%

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Melt‐crucible wetting behavior in semiconductor melt growth systems

Cröll

Lantzsch

Kitanov

et al. 2003

Cryst. Res. Technol.

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The wetting angles of several semiconductor-substrate combinations that are of practical importance for crystal growth have been measured: Ga-GaSb-Sb on fused quartz; Ge on fused quartz and carbon-based substrates, each with a selection of roughness; Si on fused quartz plates and on plates coated with fused quartz, Si 3 N 4 , and BN powders. The Ga-GaSb-Sb system showed no significant dependence of the wetting angle on the composition despite a large composition dependence of the surface tension. For Ge, the effect of the roughness on the angle could initially be seen on both types of substrates, but for the fused quartz substrates an equilibrium value independent of the surface treatment was reached after several hours of contact time. For Si, total wetting was found for Si 3 N 4 powders. A reduction of the angle over time was found for both fused quartz and BN powders, with the BN powder showing the highest angle at 150-120°. Dedicated to Professor K. W. Benz on the occasion of his 65th birthday.

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Section: Resultsmentioning

confidence: 98%

Section: Resultsmentioning

confidence: 99%

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Melt‐crucible wetting behavior in semiconductor melt growth systems

Cröll

Lantzsch

Kitanov

et al. 2003

Cryst. Res. Technol.

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“…From striation patterns, the curvature of the growth interface as well as from numerical simulations there is proof for thermocapillary convection which affects mainly the crystal edges by heat and matter transport [5,6]. The surface tension of the melt [7] or solution can act as the source of additional energy to create dislocations. This may be the reason for a different behaviour of dislocations at the borders of the crystals which is shown in one example in figure 3e.…”

Section: Methodsmentioning

confidence: 99%

“…Originally the experiments were designed to study the influence of thermocapillary convection on the growth and properties of crystals without buoyancy driven convection [5,6] but with gradients of the surface tension at the free surfaces of the liquid nutrient [7]. The floating zone (FZ) method was used for a stoichiometric melt composition and the floating solution zone (FSZ) method for the growth from Bi solution.…”

Section: Introductionmentioning

confidence: 99%

Dislocations and dislocation reduction in space grown GaSb

Danilewsky¹,

Cröll

Tonn

et al. 2009

Cryst. Res. Technol.

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The behaviour of dislocations in GaSb crystals grown in space both from a stoichiometric melt (floating zone method, FZ) and a Bi solution (floating solution zone, FSZ) respectively, is studied. Predominantly straight 60° dislocations with Burgers vectors of the type b = a/2 <110> in (111) glide planes are identified. In the 20 mm long FZ single crystal the linear growing out of the dislocations is observed which reduces the dislocation density in the centre of the crystal to values below 300 cm . The Bi incorporation in the FSZ crystal results in a misfit between seed and grown crystal and in a network of misfit dislocations at the interface. Thermocapillary convection during growth as well as the surface tension may be the reasons for the presence of curved dislocations and the higher dislocation density within a 1 -2 mm border region at the edges of both of the crystals. Dedicated to Prof. Wolfgang Neumann on the occasion of his 65th birthday

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