GaSb single crystals doped with manganese

Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions

“…(Ga, Mn)Sb DMS grown by LTMBE was first reported in 2000 [2] . Though experiments on the bulk growth of DMS materials under near equilibrium mode are relatively rare compared with non-equilibrium methods, Bridgman and Czochralski growth of GaSb doped with Mn have also been reported [3,4] .…”

“…In Fig.6(b), this structure also formed in the periphery of the crystal and developed into the inside of the crystal.The defects and the inhomogeneous distribution of the etch pits indicate that during the crystal growth process, strong stresses are introduced and this is one of the causes of the formation of dislocations and other defects. The density of melt GaSb is 6.03 g/cm3 , larger than the density of solid GaSb (5.61 g/cm 3 ), and when transformed from melt to solid the volume expanded toward the crucible inner wall and high stress was generated.…”

Plastic deformation at high temperatures of pure and Mn-doped GaSb

“…It offers an opportunity to study chemical trends related to the interaction between carriers and magnetic spins in a different host without the need of additional doping because of the shallow acceptor levels of Mn in GaSb. [10][11][12] These features make it necessary to prepare homogeneous materials with low dislocation densities in order to satisfy the requirements of the electronic and optoelectronic industries.…”