2016
DOI: 10.1134/s1063782616100146
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GaSb laser-power (λ = 1550 nm) converters: Fabrication method and characteristics

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Cited by 9 publications
(4 citation statements)
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“…However, it should be borne in mind that the practical implementation of such a system may encounter an economic limitation in the form of a much higher cost per unit of optical power compared to the case of a wavelength of 975 nm. In addition, there are also likely to be limitations on the efficiency of light-to-electricity conversion of photovoltaic converters during the transition from silicon to converters based on gallium antimonide, although significant progress has been made recently in their development and commercial production [17]. Another way to increase the maximum cable length, while remaining in the spectral range of about 1 μm, requires to ensure a significant reduction in power consumption.…”
Section: Discussionmentioning
confidence: 99%
“…However, it should be borne in mind that the practical implementation of such a system may encounter an economic limitation in the form of a much higher cost per unit of optical power compared to the case of a wavelength of 975 nm. In addition, there are also likely to be limitations on the efficiency of light-to-electricity conversion of photovoltaic converters during the transition from silicon to converters based on gallium antimonide, although significant progress has been made recently in their development and commercial production [17]. Another way to increase the maximum cable length, while remaining in the spectral range of about 1 μm, requires to ensure a significant reduction in power consumption.…”
Section: Discussionmentioning
confidence: 99%
“…The most efficient PPCs to date are based on GaAs and absorb in the wavelength range of 800-850 nm [2], [16], [17], [18], [19], [20], [21], [22], yielding power conversion efficiencies up to 69% [16]. Other material systems have been explored for PPCs targeting operation at different wavelengths [2] such as 980 nm [23], 1064 nm [24], [25], [26], and 1550 nm [23], [27], [28], [29], [30]. For transmission through optical fiber, wavelengths in the telecommunications O-or C-bands (∼1310 or ∼1550 nm) offer reduced attenuation This work is licensed under a Creative Commons Attribution 4.0 License.…”
Section: Introductionmentioning
confidence: 99%
“…To match the material band gap with the laser wavelength, numerous semiconductor materials have been used for different laser wavelength, such as GaAs for 808 nm laser light, InGaAs [7] and Si [8] for 1064 nm and GaInAsP [9] and GaSb [10] for 1550 nm. Among these materials, GaAs LPCs for converting the power of 808 nm laser light have attracted the most attention thanks to their well-characterized fabrication methods and high conversion efficiency [11−13] .…”
Section: Introductionmentioning
confidence: 99%