GaS0.4Se0.6: Relevant properties and potential for 1064 nm pumped mid-IR OPOs and OPGs operating above 5 μm

Petrov, Valentín; Panyutin, Vladimir; Tyazhev, Aleksey; Marchev, Georgi; Zagumennyĭ, A. I.; Rotermund, Fabıan; Noack, F.; Miyata, Kanji; Исхакова, Л. Д.; Zerrouk, A. F.

doi:10.1134/s1054660x11070255

Cited by 38 publications

(27 citation statements)

References 27 publications

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“…This result is well confirmed quantitatively by other groups of researchers 58,60 . Figure 14 illustrates the advantage of S-doped GaSe with respect to the damage threshold under pumping by an ultrashort pulse Ti:Sapphire laser system (Coherent) consisting of an Nd:YLF laser Verdi-5 V supplied with a BBO SHG that pumps a master Ti:Sapphire laser Mira 900-B.…”

Section: Crystalsupporting

confidence: 81%

Doped GaSe crystals for laser frequency conversion

Guo

Xie

et al. 2015

Light Sci Appl

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In this review, we introduce the current state of the art of the growth technology of pure, lightly doped, and heavily doped (solid solution) nonlinear gallium selenide (GaSe) crystals that are able to generate broadband emission from the near infrared (IR) (0.8 mm) through the mid-and far-IR (terahertz (THz)) ranges and further into the millimeter wave (5.64 mm) range. For the first time, we show that appropriate doping is an efficient method controlling a range of the physical properties of GaSe crystals that are responsible for frequency conversion efficiency and exploitation parameters. After appropriate doping, uniform crystals grown by a modified technology with heat field rotation possess up to 3 times lower absorption coefficient in the main transparency window and THz range. Moreover, doping provides the following benefits: raises by up to 5 times the optical damage threshold; almost eliminates two-photon absorption; allows for dispersion control in the THz range independent of the mid-IR dispersion; and enables crystal processing in arbitrary directions due to the strengthened lattice. Finally, doped GaSe demonstrated better usefulness for processing compared with GaSe grown by the conventional technology and up to 15 times higher frequency conversion efficiency. INTRODUCTIONThe e-polytype of gallium selenide (hereinafter GaSe) has been known since 1934 1 and promises efficient optical frequency conversion and detection over a large range of wavelengths. The performance potential of GaSe, which belongs to the point group symmetry 6m2, can be attributed to its extreme physical properties. GaSe has a broadband transparency window over the range of 0.62-20 mm for non-polarized light continues at wavelengths o50 mm 2,3 . Other attractive physical properties of GaSe are its prodigious birefringence B 5 0.375 at l 5 10.6 mm and 0.79 at terahertz (THz) range 4 , and very high second-order nonlinear susceptibility d 22 5 54 pm V 21 at 10 mm 5 and 24.3 pm/V in the THz band 6 . Among the mid-infrared (IR) anisotropic nonlinear crystals, GaSe has the second highest optical damage threshold 7,8 and thermal conductivity in the plane of the (0001) A GaSe crystal was first used for laser frequency conversion in the mid-IR in 1972 9,10 . In subsequent years, GaSe was widely used for inlab mid-IR applications 5 . Over the past two decades, GaSe has been among the most promising nonlinear optical crystals for efficient generation of ultrabroadband radiation 0.8-5640 mm (with the

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Section: Crystalsupporting

confidence: 81%

Doped GaSe crystals for laser frequency conversion

Guo

Xie

et al. 2015

Light Sci Appl

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“…The first one is in fact a rather old idea of doping or mixing binary or ternary compounds to obtain new, more complex ternary NLCs like GaS x Se 1-x [16] or quaternary NLCs like Cd x Hg 1-x Ga 2 S 4 or Ag x Ga x Ge 1-x S 2 [15], see Fig. 2.…”

Section: Wide Band-gap Non-oxide Nonlinear Crystalsmentioning

confidence: 99%

Progress in 1-μm Pumped Mid-IR Optical Parametric Oscillators Based on Non-Oxide Nonlinear Crystals

Petrov

2015

IEEE J. Select. Topics Quantum Electron.

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Pumping mid-IR optical parametric oscillators near 1 µm is attractive for its simplicity and power scaling capability. To this aim, wide band-gap non-oxide nonlinear crystals are needed. This paper reviews the recent developments in crystal growth and singly resonant optical parametric oscillators for generation of high single pulse energy and average powers in the mid-IR from 3 to 10 µm.Index Terms-mid-infrared spectral range, optical parametric oscillators, non-oxide nonlinear crystals, nanosecond pulses, high energy and average power 1077-260X (c)

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“…When as the active medium the solid state laser has to be used then the laser generated wavelength was shifted by the nonlinear optics -optical parametric generation, mainly [4][5][6] . From the point of the application the wavelength in the midinfrared range is desired for remote sensing, trace gas analysis, pollution measurement, military countermeasures, and also considerably for biomedical diagnostics and medical treatment 7,8 and therefore the compact system is required.…”

Section: Introductionmentioning

confidence: 99%

Gain-switched Fe:ZnMgSe laser oscillation under cryogenic temperature

et al. 2014

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The spectroscopic and laser properties of bulk Bridgman-grown Fe,Cr:Zn 1-x Mg x Se single crystals with the various concentrations of Mg (x=0.19; x=0.27; x=0.38) were investigated in the wide temperature range. The pumping was provided by a 2.94 μm Q-switched Er:YAG laser with a maximal energy of 15 mJ in 120 ns pulse, repetition rate 1 Hz. Q-switched operation was achieved by the Brewster angle cut LiNbO3 Pockels cell placed between the rear mirror and the Er:YAG laser active medium. The pump radiation was directed into the Fe:ZnMgSe crystal placed inside the LN cooled dewar. The 55 mm long plane-concave cavity was formed by a dichroic pumping mirror (T = 92 % @ 2.94 μm and R = 100 % @ 4 -5 μm) and a output coupler (R = 95 % @ 4.5 μm, r = 200 mm). The strong dependence of output pulse energy on temperature was observed for all samples. The maximum output Fe,Cr:Zn 1-x Mg x Se laser energy was 230 μJ and 180 μJ (for Mg concentration x=0.19 and x=0.38, respectively) for gain switched operation at 88 K. The central emission wavelength of ~ 4600 nm, ~ 4700 nm and ~ 4800 nm for Mg concentration x=0.19; x=0.27, and x=0.37, respectively at 88 K was obtained. The emission wavelength was found to increase up to ~ 4700 nm and ~ 4900 nm at 250 K for Mg concentration x=0.19 and x=0.38, respectively. This results show the possibility to obtain sufficiently longer oscillation wavelengths compared to previously studied Fe:ZnSe active medium especially at liquid nitrogen temperatures when pumping by free-running Er:YAG laser becomes possible. Fluorescence spectra and lifetimes of Fe 2+ ions in different Zn 1-x Mg x Se crystals in the range from 250 K down to 80 K were also measured.

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GaS0.4Se0.6: Relevant properties and potential for 1064 nm pumped mid-IR OPOs and OPGs operating above 5 μm

Cited by 38 publications

References 27 publications

Doped GaSe crystals for laser frequency conversion

Doped GaSe crystals for laser frequency conversion

Progress in 1-μm Pumped Mid-IR Optical Parametric Oscillators Based on Non-Oxide Nonlinear Crystals

Gain-switched Fe:ZnMgSe laser oscillation under cryogenic temperature

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