Gas source molecular beam epitaxial growth model for Ga x In1?x As y P1?y on GaAs

Characteristics, Thermodynamics, and Preparation of Nanocaged 12CaO·7Al2O3 and Its Derivatives

“…Moreover, Pr 3+ ‐doped C12A7 (C12A7–Pr 3+ ) was investigated by Mao and co‐workers in 2011. Furthermore, Liu and his team had systematically prepared and studied Er 3+ ‐, Yb 3+ ‐, Tb 3+ ‐, Eu 3+ ‐, Nd 3+ ‐doped or co‐doped derivatives of C12A7 (C12A7–Er 3+ , C12A7–Yb 3+ /Er 3+ , C12A7–Eu 2+ /Nd 3+ , and C12A7–Tb 3+ /Ce 3+ ). For C12A7–Er 3+ and C12A7–Yb 3+ /Er 3+ , two main emission bands centered around 530/550 nm [green, up‐conversion emission intensity increasing with doping content of Er 3+ (1.0, 1.5, 3.0 mol.%)] and 660 nm [red, with intensity ratio of red‐to‐green up‐conversion emission increasing with doping content of Yb 3+ (1.0, 2.0, 10.0 mol.%)/Er 3+ (fixed at 1.0 mol.%)] were observed via up‐conversion process by Wang et al .…”

“…found phosphor of C12A7–Tb 3+ /Ce 3+ (with additional phase of CaCeAl 3 O 7 ) with green light emission of short lifetime (2.51 ms) under low‐voltage electron beam excitation (3 kV). Liu et al . found optical performances of C12A7–Re derivatives were affected by the sort and amount of encaged anions via optical and EPR spectroscopy analysis.…”

“…Many works have then been devoted to further characterize C12A7 and its derivatives for practical applications with significant achievements, including, for example, photo‐induced electrical conduction and luminescence properties …”

“…Referring to phase diagram, constant effort has been put on generating thermodynamic data of C12A7 phase since 1900s, but uncertainty still remains for newly published data . As compositions (ratios of raw materials or/and additions) and fabrication processing (sintering time, atmosphere, and temperature) have great effects on resulting performances and characteristic properties of oxides, the synthesis methods for multifunctional C12A7 single crystal are still under debated. For instance, C12A7 sintered in different atmospheres (including H 2 , H 2 /N 2 , O 2 , and vacuum) could lead to various derivatives with special performances (see the part of “Derivatives of C12A7”) .…”

Structural and optical properties of 0.98 μm InGaAs/InGaAsP strained-compensated multiple quantum well structures grown by gas-source molecular beam epitaxy

“…The growth temperature was varied from 430 to 5203C. In order to keep the same As composition in the InGaAsP barrier, the AsH to PH #ow rate ratios for di!erent growth temperatures were determined from our growth model [13,14]. After growth, the MQW structures were characterized by DXRD, TEM and PL measurements.…”