2010
DOI: 10.1016/j.proeng.2010.09.064
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Gas sensitivity of hybrid nanostructured films based on polyoxometalates

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Cited by 1 publication
(5 citation statements)
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“…In 2010, Ivanova et al prepared a sensor based on a nano-SiO x film based on Dawson POMs as an activator. 32 They introduced various synthetic POMs directly into the SiO x film and then obtained a sensitive film with a high specific surface area at room temperature. The thin film has a highly developed nanoscale pore, and the selectivity and sensitivity of NH 3 and N 2 H 2 are better (Figure 6).…”
Section: Performance Of Inorganic Semiconductormentioning
confidence: 99%
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“…In 2010, Ivanova et al prepared a sensor based on a nano-SiO x film based on Dawson POMs as an activator. 32 They introduced various synthetic POMs directly into the SiO x film and then obtained a sensitive film with a high specific surface area at room temperature. The thin film has a highly developed nanoscale pore, and the selectivity and sensitivity of NH 3 and N 2 H 2 are better (Figure 6).…”
Section: Performance Of Inorganic Semiconductormentioning
confidence: 99%
“…The BiVO 4 /PW 12 nanocomposite device can exhibit higher gas sensitivity at room temperature. In 2010, Ivanova et al prepared a sensor based on a nano-SiO x film based on Dawson POMs as an activator . They introduced various synthetic POMs directly into the SiO x film and then obtained a sensitive film with a high specific surface area at room temperature.…”
Section: Poms For Enhancing the Sensing Performance Of Inorganic Semi...mentioning
confidence: 99%
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