Gas sensing response analysis of p-type porous chromium oxide thin films

Kamble, Vinayak B.; Umarji, A.M.

doi:10.1039/c3tc31830c

Cited by 65 publications

(48 citation statements)

References 39 publications

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“…The data are in concordance with other results for Fe-doped ZnO [16,21]. The slope of both lines differs significantly (β H2 ¼0.55 and β EtOH ¼0.93), due to different types of chemical reactions between chemisorbed oxygen and test gases at the surface of the nanocrystallites [77]. In conclusion, such a change in the current value of about two orders of magnitude combined with high selectivity demonstrated, that ZnO:Fe-doping is a good approach to improve the gas detection performances to ethanol vapour of the ZnO nanostructured films which can be used as a promising sensing material for the fabrication of C 2 H 5 OH vapour sensors.…”

Section: Gas Sensing Characteristics Of the Zinc Oxide And Zno:fe Nansupporting

confidence: 92%

Multifunctional device based on ZnO:Fe nanostructured films with enhanced UV and ultra-fast ethanol vapour sensing

Postica

Hölken

Schneider

et al. 2016

Materials Science in Semiconductor Processing

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Section: Gas Sensing Characteristics Of the Zinc Oxide And Zno:fe Nansupporting

confidence: 92%

Multifunctional device based on ZnO:Fe nanostructured films with enhanced UV and ultra-fast ethanol vapour sensing

Postica

Hölken

Schneider

et al. 2016

Materials Science in Semiconductor Processing

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“…3f and Supporting Information SI-6). Such fast response and recovery times of samples annealed at 425 °C are considerably improved compared to the most results reported on CuO and other p-type semiconductor oxide based sensors [5,6,8,15] and are comparable with most of the ultra-fast n-type semiconductor based sensors which are operated at much higher temperatures (≈400 °C) [25,26]. The dependence of response and recovery times to 100 ppm of EtOH vapour versus operating temperature for sensors based on CuO NW networks (annealed at 425 °C) is presented in Supporting Information SI-7.…”

Section: Resultsmentioning

confidence: 64%

Single and networked CuO nanowires for highly sensitive p-type semiconductor gas sensor applications

Lupan

Postica

Creţu

et al. 2015

Phys. Status Solidi RRL

103

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Development of high‐performance p‐type semiconductor based gas sensors exhibiting fast‐response/recovery times with ultra‐high response are of major importance for gas sensing applications. Recent reports demonstrated the excellent properties of p‐type semiconducting oxide for various practical applications, especially for selective oxidation of volatile organic compounds (VOCs). In this work, sensors based on CuO nanowire (NW) networks have been successfully fabricated via a simple thermal oxidation process on pre‐patterned Au/Cr pads. Our investigation demonstrates high impact of the process temperature on aspect ratio and density of copper oxide NWs. An optimal temperature for growth of thin and densely packed NWs was found to be at 425 °C. The fabricated sensors demonstrated ultra‐high gas response by a factor of 313 to ethanol vapour (100 ppm) at an operating temperature of 250 °C. High stability and repeatability of these sensors indicate the efficiency of p‐type oxide based gas sensors for selective detection of VOCs. A high‐performance nanodevice was fabricated in a FIB‐SEM system using a single CuO NW, demonstrating an ethanol response of 202 and rapid response and recovery of ∼198 ms at room temperature. The involved gas sensing mechanism of CuO NW networks has been described. We consider that the presented results will be of a great interest for the development of higher‐performance p‐type semiconductor based sensors and bottom‐up nanotechnologies. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

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“…The details of the gas sensor characterization setup can be found elsewhere 25 . The %Response (S) was calculated using equation (1);…”

Section: Measurement Of the Gas Sensing Propertiesmentioning

confidence: 99%

Effect of RF power on the structural, optical and gas sensing properties of RF-sputtered Al doped ZnO thin films

Srinatha

Kamble³

et al. 2016

RSC Adv.

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The effect of Radio Frequency (RF) power on the properties of magnetron sputtered Al doped ZnO thin films and the related sensor properties are investigated. A series of 2 wt% Al doped ZnO; Zn0.98Al0.02O (AZO) thin films prepared with magnetron sputtering at different RF powers, are examined. The structural results reveal a good adhesive nature of thin films with quartz substrates as well as increasing thickness of the films with raising RF power. Besides, the increasing RF power is found to improve the crystallinity and grains growth as confirmed by X-ray diffraction. On the other hand, the optical transmittance is significantly influenced by the RF power, where the transparency values achieved are higher than 82% for all the AZO thin films and the estimated optical band gap energy is found to decrease with RF power due to an increase in the crystallite size as well as the film thickness. In addition, the defect induced luminescence at low temperature (77 K) and room temperature (300 K) was studied through photoluminescence spectroscopy, it is found that the defect density of electronic states of Al 3+ ion found to increase with increase of RF power due to the increase in the thickness of the film and the crystallite size. The gas sensing behavior of AZO films was studied for NO2 at 350 °C. The AZO film shows good response towards NO2 gas and also a good relationship between the response and the NO2 concentration, which is modeled using an empirical formula. The sensing mechanism of NO2 is discussed.

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Gas sensing response analysis of p-type porous chromium oxide thin films

Cited by 65 publications

References 39 publications

Multifunctional device based on ZnO:Fe nanostructured films with enhanced UV and ultra-fast ethanol vapour sensing

Multifunctional device based on ZnO:Fe nanostructured films with enhanced UV and ultra-fast ethanol vapour sensing

Single and networked CuO nanowires for highly sensitive p-type semiconductor gas sensor applications

Effect of RF power on the structural, optical and gas sensing properties of RF-sputtered Al doped ZnO thin films

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