2009
DOI: 10.1063/1.3275794
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Gas sensing properties of single crystalline porous silicon nanowires

Abstract: We demonstrate that the porous silicon nanowires (SiNWs) prepared by metal-assisted chemical etching method could impart sensitivity of nanowire electrical properties to gaseous nitrogen oxide (NO) at room temperature, thus are suitable for sensing NO and air monitoring. Particularly, the sensors made from the porous SiNWs assembly showed fast response and excellent reversibility to subparts per million NO concentrations. The excellent sensing performance coupled with scalable synthesis of porous SiNWs could o… Show more

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Cited by 149 publications
(107 citation statements)
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“…[125][126][127] In this case, etching is a very efficient way to construct large-area nanowire arrays ( Figure 6d). As described above, SLPL interfaces by increasing surface roughness can be obtained based on the θ IWT .…”
Section: D Slpl Materials Consist Of 1d Materialsmentioning
confidence: 99%
“…[125][126][127] In this case, etching is a very efficient way to construct large-area nanowire arrays ( Figure 6d). As described above, SLPL interfaces by increasing surface roughness can be obtained based on the θ IWT .…”
Section: D Slpl Materials Consist Of 1d Materialsmentioning
confidence: 99%
“…The main difference of this study to ref. 41 and 44 is the existence of surfactant ethanol, which may be responsible for the different observations and interpretations.…”
Section: Mechanism Of Pore Formationmentioning
confidence: 99%
“…Recent reports show that single crystalline porous silcion nanowires have been synthesized through both one-step and two-step reactions by adjusting the reaction conditions. [41][42][43][44][45][46][47][48][49][50][51] Highly Doped p-type Si (100) Wafer 43 One-step chemical etching involves the immersion of clean p-type silicon substrates in an etchant solution containing 0.01-0.04 M AgNO 3 and 5 M HF. It was found that the surface morphology of the as-synthesized silicon nanowires was highly dependent on the resistivity of the original silicon wafers.…”
Section: Synthesis Of Porous Silicon Nanowires and The Mechanismmentioning
confidence: 99%
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