Gas-sensing properties of semiconductor heterolayers fabricated by a slide-off transfer printing method

Kawahara, Akihiko; Yoshihara, Kousei; Katsuki, Hiroaki; Shimizu, Yasuhiro; Egashira, Makoto

doi:10.1016/s0925-4005(99)00405-0

Cited by 23 publications

(8 citation statements)

References 12 publications

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“…Very interesting experiments on this kind of sensors have been made by Prof. Shimizu at all [13]. They have investigated single layer gas sensors, where the sensing layer was made of tin dioxide or tin dioxide doped with platinum.…”

Section: Diffusion Of Substratesmentioning

confidence: 99%

Methods of selectivity improvements of semiconductor gas sensors

Halek

Malewicz

Teterycz

2009

2009 International Students and Young Scientists Workshop "Photonics and Microsystems"

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In this paper, methods for selectivity improvement of semiconductor gas sensors are presented. The frequently used techniques are: temperature modulation, synthesis of new materials, designing new sensor constructions, adopting filter layers and using of sensors array. A comparison between the different methods has been made. It was concluded that the kind of sensing material and filter layer have a strong influence on the sensor parameters. The analysis has shown that the optimal detection temperature change when using multilayer gas sensors.

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Section: Diffusion Of Substratesmentioning

confidence: 99%

Methods of selectivity improvements of semiconductor gas sensors

Halek

Malewicz

Teterycz

2009

2009 International Students and Young Scientists Workshop "Photonics and Microsystems"

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“…In addition, thickness and porosity of the sensing layer are well known as important factors in determining gas-sensing properties of semiconductor-type gas sensors [21][22][23][24][25][26][27][28][29]. For example, we have actually reported that the porous metal oxides (e.g., In2O3 or SnO2) prepared by utilizing a selfassembly of surfactants such as n-cetylpyridinium chloride (several nm in diameter) or polymethylmethacrylate (PMMA) microspheres (28-1500 nm in diameter) as a template showed excellent gas-sensing properties, due to the enhancement of both the gas diffusivity and the gas reactivity on their oxide surface [25][26][27][28][29].…”

Section: Introductionmentioning

confidence: 99%

Enhancement of methylmercaptan sensing response of WO3 semiconductor gas sensors by gas reactivity and gas diffusivity

Ueda

Maeda

Huang

et al. 2018

Sensors and Actuators B: Chemical

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WO3-based semiconductor-type gas sensors were fabricated, and their sensing properties to methylmercaptan (CH3SH) were examined in this study. The Ru loading on WO3 was an effective way of an increase in the CH3SH response. In addition, the CH3SH response increased with a decrease in the operating temperature as well as with an increase in the thickness of the Ru-loaded WO3 sensing layer. The increase in the porosity of the Ru-loaded WO3 sensors, which were fabricated by utilizing polymethylmethacrylate microspheres as a template, was also effective in improving the CH3SH response, especially at a low temperature of 150°C. In addition, the lamination of the Ru-loaded WO3 sensor with an α-Al2O3 film improved the CH3SH response at 200°C. Moreover, the Ru loading on the WO3 powder increased the catalytic activities of CH3SH oxidation, and CH3SH was partially oxidized to CH3SSCH3 at temperatures less than 330°C. It was suggested that the increase in the positively charged adsorption of the partially oxidized products onto the bottom part of the sensing layer is effective for enhancing the CH3SH response, especially at lower operating temperatures.

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“…Numerous efforts have been directed to developing various kinds of highly sensitive and selective H2 sensors [1][2][3][4][5][6][7][8][9], which were indispensable for operating next-generation power-supply systems utilizing H2 as an energy source (e.g., fuel cells) as well as various industrial plants producing H2 as a by-product (e.g., chlor-alkali electrolysis) safely and effectively. We have also demonstrated that sensing properties of various semiconductor-type H2 sensors were improved by the strict control of mesopores and/or macropores of gas-sensing materials by utilizing self-assembly of surfactants in water [10][11][12] or polymer microspheres [13,14] as a template as well as the control of sensor structure (especially, optimization of thickness and hetero-stacking of the sensing layer) by spin-coating [15][16][17], dipping [18] or slide-off transfer printing [19][20][21]. However, it is really difficult to operate the semiconductor-type H2 sensors under O2-free atmosphere, because the formation of negatively oxygen adsorbates on the oxide surface is essential for the reaction with the H2 molecules.…”

Section: Introductionmentioning

confidence: 99%

Effects of surface modification of noble-metal sensing electrodes with Au on the hydrogen-sensing properties of diode-type gas sensors employing an anodized titania film

Hyodo

Yamashita

Shimizu

2015

Sensors and Actuators B: Chemical

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weight)) have been fabricated, and the effects of surface modification of the electrodes with Au on their H2-sensing properties have been investigated at 250°C in both air and N2 under dry and wet atmospheres. H2 response of all the M/TiO2 sensors in N2 was much larger than that in air under both dry and wet atmospheres. The Pt/TiO2 sensor showed the smallest H2 response in air among them, but the surface modification of the Pt electrode with Au was quite effective in enhancing the H2 response of the Pt/TiO2 sensor in air. Therefore, the response of the Au/Pt/TiO2 sensor to 8000 ppm H2 in air was comparable to that in N2, especially under wet atmosphere, and thus the response of the Au/Pt/TiO2 sensor to 8000 ppm H2 was almost independent of oxygen concentration under wet atmosphere. In addition, the annealing of the sensor at 600°C did not affect the response of the Au/Pt/TiO2 sensor to 8000 ppm H2. The homogeneous mixing of Au into the Pt electrode also improved the H2 response of the Pt/TiO2 sensor, but the effectiveness was much lower than that of the surface modification of the Pt electrode with Au. On the other hand, the response of the as-fabricated Au/Pd/TiO2 and Au/Pd-Pt/TiO2 sensors to 8000 ppm H2 in air were much larger than that of the Au/Pd/TiO2 and Au/Pd-Pt/TiO2 sensors annealed at 600°C, especially under wet atmosphere. The large H2 response observed with the Au/Pt/TiO2 sensor and the as-fabricated Au/Pd/TiO2 and Au/Pd-Pt/TiO2 sensors can be explained by large suppression of H2 oxidation by Au components remained at the surface of their sensing electrodes and then increased amount of dissociativelyadsorbed hydrogen species at the sensing electrode surface.

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Gas-sensing properties of semiconductor heterolayers fabricated by a slide-off transfer printing method

Cited by 23 publications

References 12 publications

Methods of selectivity improvements of semiconductor gas sensors

Methods of selectivity improvements of semiconductor gas sensors

Enhancement of methylmercaptan sensing response of WO3 semiconductor gas sensors by gas reactivity and gas diffusivity

Effects of surface modification of noble-metal sensing electrodes with Au on the hydrogen-sensing properties of diode-type gas sensors employing an anodized titania film

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